Deng - Scissionable Polymer Photoresist

Extreme ultraviolet (EUV) is one of the most promising methods to create nano-size patterns below 10 nm. Numerous EUV resists have been developed in last decades to accommodate EUV lithography. The main challenge of EUV lithography lies in RLS tradeoff, which specify the tradeoff among resolution (R), line edge roughness (L) and sensitivity (S). In addition, EUV lithography suffers from low photon numbers, which may cause stochastic issues. In this work, we developed chemically amplified chain scissionable polymers to tackle these issues. Polyphthalaldehyde (PPA) based photoresists have been synthesized and their lithographic performance have been investigated.