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Process Catalog

Anisotropic silicon

    • Equipment: Plasmatherm PT 770 left side
    • Ambient: Cl2, BCl3, H2
    • Etch rate (A/min): 3000
    • Selectivity: 10:1 oxide, 0.7:1 resist
    • Substrate size: 3 inch, 100 mm

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Isotropic silicon release etch

    • Equipment: Plasmatherm PT 72
    • Ambient: SF6/O2
    • Etch rate (A/min): 1100
    • Selectivity: 300:1 oxide
    • Substrate size: up to 200 mm

 

    • Equipment: Oxford 80
    • Ambient: SF6/O2
    • Etch rate (A/min):
    • Selectivity:
    • Substrate size: up to 200 mm

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Polysilicon

    • Equipment: Plasmatherm PT 770 left side
    • Ambient: Cl2, BCl3, H2
    • Etch rate (A/min): 1500
    • Selectivity: 3:1 nitride, 7:1 oxide, 0.7 resist
    • Substrate size: 3 inch, 100 mm

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Silicon dioxide

    • Ambient: CHF3/O2
    • Etch rate (A/min): 255
    • Selectivity: 2:1 resist, 5:1 silicon
    • Substrate size: up to 150 mm

 

    • Equipment: Oxford 80
    • Ambient: CHF3/O2
    • Etch rate (A/min): 300
    • Selectivity: 2:1 resist, 5:1 silicon
    • Substrate size: up to 150 mm

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 PSG

    • Ambient: CHF3/O2
    • Etch rate (A/min): 330
    • Selectivity: 2:1 resist
    • Substrate size: up to 150 mm

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Silicon nitride and low stress silicon nitride

    • Equipment: Plasmatherm PT 72
    • Ambient: CF4/H2
    • Etch rate (A/min): 290
    • Selectivity: 2:1 resist
    • Substrate size: up to 200 mm

 

    • Equipment: Oxford 80
    • Ambient: CHF3/O2
    • Etch rate (A/min): 600-650 for LPCVD, 750 PECVD
    • Selectivity: 3:1 resist, 4:1 Si
    • Substrate size: up to 200 mm

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Galium arsenide (GaAs)

    • Equipment: PlasmaQuest
    • Ambient: Cl2/BCl3
    • Etch rate (A/min): 2200
    • Selectivity: ?
    • Substrate size: up to 100 mm

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Galium Nitride (GaN)

    • Equipment: PlasmaQuest
    • Ambient: Cl2/Ar/CH4
    • Etch rate (A/min): 800
    • Selectivity: 1:1 resist
    • Substrate size: up to 100 mm

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Indium phosphide (InP)

    • Equipment: PlasmaQuest
    • Ambient: ?
    • Etch rate (A/min): ?
    • Selectivity: ?
    • Substrate size: up to 100 mm

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Silicon carbide (SiC)

Basic SiC Mesa Etch

    • Equipment: PlasmaQuest
    • Ambient: Cl2/Ar/CH4
    • Etch rate (A/min): 800
    • Selectivity: 1:1 resist
    • Substrate size: up to 100 mm

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Aluminum

    • Equipment: Plasmatherm SSL-720
    • Ambient: BCl3/Cl2/CH4
    • Etch rate (A/min): 1500
    • Selectivity: 2:1 resist
    • Substrate size: up to 150 mm

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Tungsten

    • Equipment: Plasmatherm PT 72
    • Ambient: CF4/SF6
    • Etch rate (A/min): 1000
    • Selectivity: NA
    • Substrate size: up to 200 mm

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Germanium

    • Equipment: Plasmatherm PT 72
    • Ambient: ?
    • Etch rate (A/min): ?
    • Selectivity: ?
    • Substrate size: up to 200 mm

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Molybdenum

    • Equipment: Plasmatherm PT 72
    • Ambient: CF4/SF6
    • Etch rate (A/min): ?
    • Selectivity: ?
    • Substrate size: up to 200 mm

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Photoresists

    • Equipment: Plasmatherm PT 72
    • Ambient: O2
    • Etch rate (A/min): 1000
    • Selectivity: NA
    • Substrate size: up to 200 mm

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Electron beam resists

    • Equipment: Plasmatherm PT 72
    • Ambient: O2
    • Etch rate (A/min): ?
    • Selectivity: NA
    • Substrate size: up to 200 mm

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Parylene

    • Equipment: Plasmatherm PT 72
    • Ambient: O2
    • Etch rate (A/min): ?
    • Selectivity: NA
    • Substrate size: up to 200 mm

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Polyimide

    • Equipment: Plasmatherm PT 72
    • Ambient: O2
    • Etch rate (A/min): ?
    • Selectivity: NA
    • Substrate size: up to 200 mm

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Si Deep Reactive Ion Etching Process Database

Si Deep Bosch Etch

    • Equipment: Unaxis 770, Plasmatherm 770 right side
    • Ambient: Bosch chemistry
    • Etch rate (A/min): 18000
    • Selectivity: 50:1 resist, 150:1 oxide
    • Substrate size: 3 inch, 100 mm and 150 mm

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Fast Oxide Reactive Ion Etching Process Database

    • Equipment: Oxford 100
    • Ambient: ?
    • Etch rate (A/min): ?
    • Selectivity: ? resist, ? oxide
    • Substrate size: 100 mm and  150 mm

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XeF2 Si Vapor Etching Process Database

    • Equipment: Xactix X-Etch
    • Ambient: XeF2
    • Etch rate (A/min):
    • Selectivity: ? resist, ? oxide, ? metal
    • Substrate size: pieces and full wafers up to 150 mm

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