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Equipment Overview

 

Evaporation Process Library

Thermal evaporation: Au, Ag, Al, Ni, Cr, Cu, Ge

E-beam evaporation: Ti, Pt, Au

 

Sputtering Process Library

Metals and alloys: Al, AlSi, Ti, W, TiW, Ta, Co, Cu, Cr, Si, MoSi2

Reactive sputtering of dielectrics: SiO2, SiN, TiN, AlN, TiO2

  • Process: Sputtered Aluminum
  • Equipment: CVC AST-601
  • Ambient, flow (sccm): Ar, 40
  • Pressure(mtorr): 9
  • Power: 2kW DC
  • Voltage (V): 400
  • Deposition rate (A/min): 250
  • Substrate size: 3-6 inch

 

  • Process: Sputtered 99% Aluminum-1%Si
  • Equipment: CVC AST-601
  • Ambient, flow (sccm): Ar, 12
  • Pressure(mtorr): 1.6
  • Power: 2kW DC
  • Voltage (V): NA
  • Deposition rate (A/min): 190
  • Substrate size: 3-6 inch

 

  • Equipment: CVC AST-601
  • Ambient, flow (sccm): Ar, 9.1
  • Pressure(mtorr): 2
  • Power: 2kW DC
  • Voltage (V): 490
  • Deposition rate (A/min): 137
  • Substrate size: 3-6 inch

 

  • Equipment: CVC AST-601
  • Ambient, flow (sccm): Ar, 40
  • Pressure(mtorr): 23
  • Power: 2kW DC
  • Voltage (V): NA
  • Deposition rate (A/min): 144
  • Substrate size: 3-6 inch

 

  • Process: Sputtered Titanium Tungsten
  • Equipment: CVC AST-601
  • Ambient, flow (sccm): Ar, 40
  • Pressure(mtorr): 20
  • Power: 2kW DC
  • Voltage (V): NA
  • Deposition rate (A/min): 155
  • Substrate size: 3-6 inch

 

  • Equipment: CVC AST-601
  • Ambient, flow (sccm): ?
  • Pressure(mtorr): ?
  • Power: ?
  • Voltage (V): ? 
  • Deposition rate (A/min): ?
  • Substrate size: 3-6 inch

 

  • Equipment: CVC AST-601
  • Ambient, flow (sccm): Ar, 40
  • Pressure(mtorr): 11
  • Power: 2kW RF
  • Voltage (V): NA
  • Deposition rate (A/min): 60
  • Substrate size: 3-6 inch

 

  • Equipment: CVC AST-601
  • Ambient, flow (sccm): Ar, 40
  • Pressure(mtorr): 20
  • Power: 3kW DC
  • Voltage (V): 453
  • Deposition rate (A/min): 536
  • Substrate size: 3-6 inch

 

  • Process: Sputtered Chromium
  • Equipment: CVC AST-601
  • Ambient, flow (sccm): Ar, 13
  • Pressure(mtorr): 1.6
  • Power: 2kW DC
  • Voltage (V): NA
  • Deposition rate (A/min): 190
  • Substrate size: 3-6 inch

 

  • Process: Sputtered Silicon
  • Equipment: CVC AST-601
  • Ambient, flow (sccm): Ar, 40
  • Pressure(mtorr): 10
  • Power: 2kW RF
  • Voltage (V): NA
  • Deposition rate (A/min): 105
  • Substrate size: 3-6 inch

 

  • Process: Sputtered Molybdenum Silicide
  • Equipment: CVC AST-601
  • Ambient, flow (sccm): Ar, 40
  • Pressure(mtorr): 10
  • Power: 2kW DC
  • Voltage (V): NA
  • Deposition rate (A/min): 162
  • Substrate size: 3-6 inch

 

  • Process: Sputtered Silicon Oxide
  • Equipment: CVC AST-601
  • Ambient, flow (sccm): Ar, 20/O2, 10
  • Pressure(mtorr): 7.1
  • Power: 2kW RF
  • Voltage (V): NA
  • Deposition rate (A/min): 24
  • Substrate size: 3-6 inch

 

  • Process: Sputtered Silicon Nitride
  • Equipment: CVC AST-601
  • Ambient, flow (sccm): Ar, 10/N2,16
  • Pressure(mtorr): 10
  • Power: 2kW RF
  • Voltage (V): NA
  • Deposition rate (A/min): 24
  • Substrate size: 3-6 inch

 

  • Process: Sputtered Titanium Nitride
  • Equipment: CVC AST-601
  • Ambient, flow (sccm): Ar, 10/N2, 10
  • Pressure(mtorr): 4
  • Power: 2kW DC
  • Voltage (V): 436
  • Deposition rate (A/min): 135
  • Substrate size: 3-6 inch


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