• Equipment Overview
• Evaporation Process Library
• Sputtering Process Library

Equipment Overview

Metals and alloys: Al, AlSi, Ti, W, TiW, Ta, Co, Cu, Cr, Si, MoSi2

Reactive sputtering of dielectrics: SiO2, SiN, TiN, AlN, TiO2

• Process: Sputtered Aluminum
• Equipment: CVC AST-601
• Ambient, flow (sccm): Ar, 40
• Pressure(mtorr): 9
• Power: 2kW DC
• Voltage (V): 400
• Deposition rate (A/min): 250
• Substrate size: 3-6 inch

• Process: Sputtered 99% Aluminum-1%Si
• Equipment: CVC AST-601
• Ambient, flow (sccm): Ar, 12
• Pressure(mtorr): 1.6
• Power: 2kW DC
• Voltage (V): NA
• Deposition rate (A/min): 190
• Substrate size: 3-6 inch

• Process: Sputtered Titanium
• Equipment: CVC AST-601
• Ambient, flow (sccm): Ar, 9.1
• Pressure(mtorr): 2
• Power: 2kW DC
• Voltage (V): 490
• Deposition rate (A/min): 137
• Substrate size: 3-6 inch

• Process: Sputtered Tungsten
• Equipment: CVC AST-601
• Ambient, flow (sccm): Ar, 40
• Pressure(mtorr): 23
• Power: 2kW DC
• Voltage (V): NA
• Deposition rate (A/min): 144
• Substrate size: 3-6 inch

• Process: Sputtered Titanium Tungsten
• Equipment: CVC AST-601
• Ambient, flow (sccm): Ar, 40
• Pressure(mtorr): 20
• Power: 2kW DC
• Voltage (V): NA
• Deposition rate (A/min): 155
• Substrate size: 3-6 inch

• Process: Sputtered Tantalum
• Equipment: CVC AST-601
• Ambient, flow (sccm): ?
• Pressure(mtorr): ?
• Power: ?
• Voltage (V): ? 
• Deposition rate (A/min): ?
• Substrate size: 3-6 inch

• Process: Sputtered Cobalt
• Equipment: CVC AST-601
• Ambient, flow (sccm): Ar, 40
• Pressure(mtorr): 11
• Power: 2kW RF
• Voltage (V): NA
• Deposition rate (A/min): 60
• Substrate size: 3-6 inch

• Process: Sputtered Copper
• Equipment: CVC AST-601
• Ambient, flow (sccm): Ar, 40
• Pressure(mtorr): 20
• Power: 3kW DC
• Voltage (V): 453
• Deposition rate (A/min): 536
• Substrate size: 3-6 inch

• Process: Sputtered Chromium
• Equipment: CVC AST-601
• Ambient, flow (sccm): Ar, 13
• Pressure(mtorr): 1.6
• Power: 2kW DC
• Voltage (V): NA
• Deposition rate (A/min): 190
• Substrate size: 3-6 inch

• Process: Sputtered Silicon
• Equipment: CVC AST-601
• Ambient, flow (sccm): Ar, 40
• Pressure(mtorr): 10
• Power: 2kW RF
• Voltage (V): NA
• Deposition rate (A/min): 105
• Substrate size: 3-6 inch

• Process: Sputtered Molybdenum Silicide
• Equipment: CVC AST-601
• Ambient, flow (sccm): Ar, 40
• Pressure(mtorr): 10
• Power: 2kW DC
• Voltage (V): NA
• Deposition rate (A/min): 162
• Substrate size: 3-6 inch

• Process: Sputtered Silicon Oxide
• Equipment: CVC AST-601
• Ambient, flow (sccm): Ar, 20/O2, 10
• Pressure(mtorr): 7.1
• Power: 2kW RF
• Voltage (V): NA
• Deposition rate (A/min): 24
• Substrate size: 3-6 inch

• Process: Sputtered Silicon Nitride
• Equipment: CVC AST-601
• Ambient, flow (sccm): Ar, 10/N2,16
• Pressure(mtorr): 10
• Power: 2kW RF
• Voltage (V): NA
• Deposition rate (A/min): 24
• Substrate size: 3-6 inch

• Process: Sputtered Titanium Nitride
• Equipment: CVC AST-601
• Ambient, flow (sccm): Ar, 10/N2, 10
• Pressure(mtorr): 4
• Power: 2kW DC
• Voltage (V): 436
• Deposition rate (A/min): 135
• Substrate size: 3-6 inch