Button: Contact CNFButton: MultimediaButton: About CNF
Button: Getting StartedButton: PublicationButton: REU ProgramButton: Events & SeminarsButton: Education OutreachButton: TechnologiesButton: Lab Equipment

Button: Lab User


Equipment Overview

Deposition Process Library

Silicon Dioxide (SiO2)

  • Process: Standard SiO2 
  • Equipment: IPE
  • Ambient: SiH4/N2O
  • Temperature (C): 275
  • Deposition rate (A/min): 420
  • Refractive index: 1.46
  • Stress: 150-200Mpa compressive
  • Substrate size: up to 6 inch

 

  • Process: Alternate SiO2
  • Equipment: IPE
  • Ambient: SiH4/N2O,
  • Temperature (C): 240
  • Deposition rate (A/min): 380
  • Refractive index: 1.54
  • Stress: 100-150Mpa compressive
  • Substrate size: up to 150 mm

 

  • Process: Standard Silicon Dioxide, n=1.46
  • Equipment: GSI
  • Ambient: SiH4/N2O/N2
  • Temperature: 400C
  • Deposition rate (A/min): 2600
  • Refractive Index: 1.46
  • Stress: 290 Mpa compressive
  • BOE 6:1 ER=1232A/min
  • BOE 30:1 ER=360A/min
  • Substrate size: up to 150 mm

 

  • Process: LOW DEP RATE OXIDE
  • Equipment: GSI
  • Ambient: SiH4/N2O/N2
  • Temperature: 400C
  • Deposition rate (A/min): 1100
  • Index: 1.46
  • Stress: ? Mpa compressive
  • BOE 6:1 ER=?A/min
  • BOE 30:1 ER=?A/min
  • Substrate size: up to 150 mm

 

  • Process: HIGH DEP RATE OXIDE
  • Equipment: GSI
  • Ambient: SiH4/N2O/N2
  • Temperature: 400C
  • Deposition rate (A/min): 4570
  • Index: 1.46
  • Stress: ? Mpa compressive
  • BOE 6:1 ER=?A/min
  • BOE 30:1 ER=?A/min
  • Substrate size: up to 150 mm

           

  • Process: High Index Silicon Dioxide (n=1.51)
  • Equipment: GSI
  • Ambient: SiH4/N2O/N2
  • Temperature: 400C
  • Deposition rate (A/min): 3000
  • Index: 1.51
  • Stress: 182 Mpa compressive
  • BOE 6:1 ER=1358A/min
  • BOE 30:1 ER=533A/min
  • Substrate size: up to 150 mm

Click here to go back to the PECVD deposition process library

Click here to go back to the CNF Process Technologies page.

Silicon Nitride

  • Process: Standard Silicon Nitride
  • Equipment: GSI
  • Ambient: SiH4/NH3/N2
  • Temperature: 400C
  • Deposition rate (A/min): 1100
  • Index: 2.0
  • Stress: 500Mpa tensile (400C)
  •            207Mpa tensile (250C)
  • BOE (6:1) ER=440A/min
  • Substrate size: up to 150 mm

 

  • Process: Standard Silicon Nitride
  • Equipment: IPE
  • Ambient: SiH4/NH3
  • Temperature (C): 300
  • Deposition rate (A/min): 160
  • Refractive index: 2.01
  • Stress: 750Mpa tensile
  • Substrate size: up to 150 mm

Click here to go back to the PECVD deposition process library

Click here to go back to the CNF Process Technologies page.

Low Stress Silicon Nitride

  • Process: Low Stress Silicon Nitride
  • Equipment: GSI
  • Ambient: SiH4/NH3/N2
  • Temperature: 400C
  • Deposition rate (A/min): 1300
  • Index: 2.04
  • Stress: 150-250 Mpa tensile
  • Substrate size: up to 150 mm

Click here to go back to the PECVD deposition process library

Click here to go back to the CNF Process Technologies page.

 TEOS-based Silicon Dioxide

  • Process: Low stress TEOS-based Silicon Dioxide
  • Equipment: GSI
  • Ambient: TEOS/O2/N2
  • Temperature: 365C
  • Deposition rate (A/min): 3775
  • Index: 1.454
  • Stress: 30 Mpa compressive
  • Substrate size: up to 150 mm

 

  • Process: Standard TEOS-based Silicon Dioxide
  • Equipment: GSI
  • Ambient: TEOS/O2/N2
  • Temperature: 365C
  • Deposition rate (A/min): 3228
  • Index: 1.454
  • Stress: 55 Mpa compressive
  • Substrate size: up to 150 mm

Click here to go back to the PECVD deposition process library

Click here to go back to the CNF Process Technologies page.

Silicon Oxynitride

  • Process:  OXYNITRIDE 1.53
  • Equipment: GSI
  • Ambient: SiH4/N2O/N2/NH3
  • Temperature: 400C
  • Deposition rate (A/min): 5680
  • Index: 1.53
  • Stress: 186 Mpa tensile
  • Substrate size: up to 150 mm

 

  • Process:  OXYNITRIDE 1.81
  • Equipment: GSI
  • Ambient: SiH4/N2O/N2/NH3
  • Temperature: 400C
  • Deposition rate (A/min): 1800
  • Index: 1.81
  • Stress: 338 Mpa tensile
  • Substrate size: up to 150 mm

Click here to go back to the PECVD deposition process library

Click here to go back to the CNF Process Technologies page.

 Phosphosilitcate Glass (PSG)

  • Process: 2% PSG
  • Equipment: GSI
  • Ambient: SiH4/N2O/N2,PH3
  • Temperature: 400C
  • Deposition rate (A/min): 2800
  • Index: ?
  • Stress: ? Mpa compressive
  • BOE 6:1 ER=?A/min
  • BOE 30:1 ER=?A/min
  • Substrate size: up to 150 mm

 

  • Process: 5% PSG
  • Equipment: GSI
  • Ambient: SiH4/N2O/N2,PH3
  • Temperature: 400C
  • Deposition rate (A/min): 2800
  • Index: ?
  • Stress: ? Mpa compressive
  • BOE 6:1 ER=?A/min
  • BOE 30:1 ER=?A/min
  • Substrate size: up to 150 mm

 

  • Process: 8% PSG
  • Equipment: GSI
  • Ambient: SiH4/N2O/N2,PH3
  • Temperature: 400C
  • Deposition rate (A/min): 2800
  • Index: ?
  • Stress: ? Mpa compressive
  • BOE 6:1 ER=?A/min
  • BOE 30:1 ER=3882A/min
  • Substrate size: up to 150 mm

Click here to go back to the PECVD deposition process library

Click here to go back to the CNF Process Technologies page.

Borosilicate Glass (BSG)

  • Process: BSG
  • Equipment: GSI
  • Ambient: SiH4/N2O/N2/B2H6
  • Temperature: 400C
  • Deposition rate (A/min): 3333
  • Index: ?
  • Stress: ? Mpa tensile
  • BOE 6:1 ER=?A/min
  • BOE 30:1 ER=?A/min
  • Substrate size: up to 150 mm

Click here to go back to the PECVD deposition process library

Click here to go back to the CNF Process Technologies page.

Borophosphosilicate Glass (BPSG)

  • Process: BPSG
  • Equipment: GSI
  • Ambient: SiH4/N2O/N2/PH3/B2H6
  • Temperature: 400C
  • Deposition rate (A/min): 3333
  • Index: ?
  • Stress: 17 Mpa tensile
  • BOE 6:1 ER=?A/min
  • BOE 30:1 ER=?A/min
  • Substrate size: up to 150 mm

Click here to go back to the PECVD deposition process library

Click here to go back to the CNF Process Technologies page.

Amorphous Si

  • Process: Standard Amorphous Silicon (a-Si)
  • Equipment: IPE
  • Ambient: SiH4/Ar
  • Temperature (C): 200
  • Deposition rate (A/min): 160
  • Substrate size: up to 150 mm

 

  • Process: a-Silicon
  • Equipment: GSI
  • Ambient: SiH4/N2
  • Temperature: 400C
  • Deposition rate (A/min): 2000
  • Index: ?
  • Stress: ? Mpa compressive
  • Substrate size: up to 150 mm

Click here to go back to the PECVD deposition process library

Click here to go back to the CNF Process Technologies page.

P-Doped Amorphous Si

  • Process: a-Silicon P+
  • Equipment: GSI
  • Ambient: SiH4/B2H6
  • Temperature: 400C
  • Deposition rate (A/min): 2000
  • Index: ?
  • Stress: ? Mpa compressive
  • Substrate size: up to 150 mm 

Click here to go back to the PECVD deposition process library

Click here to go back to the CNF Process Technologies page.

N-Doped Amorphous Si

  • Process: a-Silicon N+
  • Equipment: GSI
  • Ambient: SiH4/PH3
  • Temperature: 400C
  • Deposition rate (A/min): 2000
  • Index: ?
  • Stress: ? Mpa compressive
  • Substrate size: up to 150 mm

Click here to go back to the PECVD deposition process library

Click here to go back to the CNF Process Technologies page.



Back to Top




Button: Search Button: Search Keywords
Cornell University
NYSTARNNCINSF