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Dry Oxidation of Silicon

  • Process: Dry Oxidation
  • Equipment: MRL Cyclone furnace
  • Ambient: O2, 2.5%HCl
  • Pressure (torr): 760
  • Temperature (C): 1100
  • Thickness (A): 400-2000
  • Growth rate (A/min): 18
  • Refractive index: 1.46
  • Uniformity: 1-2%
  • Substrate size: 3,4,6 inch

Wet Oxidation of Silicon

  • Process: Wet Oxidation
  • Equipment: MRL Cyclone furnace
  • Pressure (torr): 760
  • Ambient: steam, 2.5%HCl
  • Temperature (C): 1100
  • Thickness (A): 1500-4000
  • Growth rate (A/min): 85
  • Refractive index: 1.46
  • Uniformity: 1-2%
  • Substrate size: 3,4,6 inch

Annealing



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