Button: Contact CNFButton: MultimediaButton: About CNF
Button: Getting StartedButton: PublicationButton: REU ProgramButton: Events & SeminarsButton: Education OutreachButton: TechnologiesButton: Lab Equipment

Button: Lab User


Equipment Overview

CNF currently operates a combination of 5 MRL 1142 and MRL Cyclone 440 furnaces. Each unit contains four thermal processing tubes currently configured to process up to 6 inch diameter wafers and provide a 40 inch flat temperature zone. Half of the furnaces are configured for low pressure
chemical vapor deposition (LPCVD) processes.  At present 6 tubes are currently in operation with an additional 4 tubes to come on line in late 2005.

Current processes include:

Silicon Nitride: LPCVD silicon nitride deposited at 775-800°C. Stiochiometric Si3N4 as well as low stress/silicon rich nitride recipes available. Low stress films optimized at 200 Mpa tensile stress.

Low temperature oxide (LTO): LPCVD silane based silicon oxide process. Films deposited at 425°C with depositon rates in the 100 Å/minute range.

N+/P+ Polysilicon: LPCVD polysilicon furnace capable of depositing undoped, in-situ boron or phosphorus doped poly or amorphous films. Deposition
temperatures range from 550 to 650°C with deposited resistivities in the 2-15 mohm-cm range for doped films.

TEOS-based Silicon Dioxide: Tetraethylorthosilicate based LPCVD silicon oxide process.  Deposition temperatures in the 650 to 750°C range.

TFT LTO: Diethylsilane based LPCVD silicon oxide process for TFT compatible glass substrates. Deposition temperature of 425°C.

TFT N+/P+ Poly: LPCVD polysilicon furnace for TFT compatible glass substrates capable of depositing undoped, in-situ boron or phosphorus
doped poly or amorphous films. Deposition temperatures range from 550 to 650°C with deposited resistivities in the 2-15 mohm-cm range for doped films.

Applications:

  • Device fabrication
  • n-MOS, p-MOS, CMOS, and BiCMOS devices with gate lengths to 100 nm
  • Polysilicon-based thin film transistors (TFTs)
  • Vacuum microelectronic field emitters
  • Micromechanical devices
  • Materials research
  • Charge structure and failure mechanisms of ultra-thin dielectrics
  • Metal-polysilicon interactions
  • Mechanical properties

Safety:

The gas delivery system for the furnaces has been designed for maximum purity and safety. Highest grade gases are used throughout. A Zellweger Analytical/MDA scientific toxic gas monitoring system provides continuous monitoring for hazardous gases and will automatically shutdown the gas delivery system and sound an alarm if hazardous gases are detected at levels well below those considered dangerous to the operators of the equipment.

LPCVD Process Library

Silicon Nitride

  • Process: Silicon Nitride
  • Equipment: MRL Cyclone furnace
  • Ambient, flows (sccm): DCS/ NH3, 67/200
  • Temperature (C): 775
  • Pressure (mtorr): 200
  • Deposition rate (A/min): 37
  • Stress: 1200 Mpa tensile
  • Uniformity: 1-2%
  • Substrate size: 3,4,6 inch

Low Stress Silicon Nitride

  • Process: Low Stress Silicon Nitride
  • Equipment: MRL Cyclone furnace
  • Ambient, flows (sccm): DCS/NH3, 95/16
  • Temperature (C): 800
  • Pressure (mtorr): 200
  • Deposition rate (A/min): 31
  • Stress: 180 Mpa tensile
  • Uniformity: 1-2%
  • Substrate size: 3,4,6 inch

 

Characterization Information

The CNF staff periodically conducts detailed characterization of the LPCVD MOS compatible thin fims. 

Detailed Characterization Reports

A summary of the most recent set of result is provided below.

 

 

 



Back to Top




Button: Search Button: Search Keywords
Cornell University
NYSTARNNCINSF