CNF currently operates a combination of 5 MRL 1142 and MRL Cyclone 440 furnaces. Each unit contains four thermal processing tubes currently configured to process up to 6 inch diameter wafers and provide a 40 inch flat temperature zone. Half of the furnaces are configured for low pressure
Current processes include:
Silicon Nitride: LPCVD silicon nitride deposited at 775-800°C. Stiochiometric Si3N4 as well as low stress/silicon rich nitride recipes available. Low stress films optimized at 200 Mpa tensile stress.
Low temperature oxide (LTO): LPCVD silane based silicon oxide process. Films deposited at 425°C with depositon rates in the 100 Å/minute range.
N+/P+ Polysilicon: LPCVD polysilicon furnace capable of depositing undoped, in-situ boron or phosphorus doped poly or amorphous films. Deposition
TEOS-based Silicon Dioxide: Tetraethylorthosilicate based LPCVD silicon oxide process. Deposition temperatures in the 650 to 750°C range.
TFT LTO: Diethylsilane based LPCVD silicon oxide process for TFT compatible glass substrates. Deposition temperature of 425°C.
TFT N+/P+ Poly: LPCVD polysilicon furnace for TFT compatible glass substrates capable of depositing undoped, in-situ boron or phosphorus
The gas delivery system for the furnaces has been designed for maximum purity and safety. Highest grade gases are used throughout. A Zellweger Analytical/MDA scientific toxic gas monitoring system provides continuous monitoring for hazardous gases and will automatically shutdown the gas delivery system and sound an alarm if hazardous gases are detected at levels well below those considered dangerous to the operators of the equipment.
The CNF staff periodically conducts detailed characterization of the LPCVD MOS compatible thin fims.
Detailed Characterization Reports
A summary of the most recent set of result is provided below.
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This material is based upon work supported by the National Science Foundation under Grant No. NNCI-1542081. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.
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Cornell NanoScale Science & Technology Facility (CNF)
250 Duffield Hall, Cornell University, Ithaca, New York 14853-2700
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