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Bonding Processes

 

  • Process: Silicon Direct Bond (Si-Si, Si-SiO2, SiO2-SiO2)
  • Equipment: EV 520
  • Heating temperature (C): NA
  • Cooling temperature (C): NA
  • Force (N): 1750
  • Substrate size: up to 4 inch

 

  • Process: Anodic Bond
  • Equipment: EV 520
  • Heating temperature (C): 350
  • Cooling temperature (C): 200
  • Force (N): 50
  • Voltage (V): 500
  • Substrate size: up to 4 inch

 

  •  Process: Glass Frit Bond
  • Equipment: EV 520
  • Heating temperature (C): 420
  • Cooling temperature (C): 350-200
  • Force (N): 1750
  • Substrate size: up to 4 inch

Embossing Processes

 

Embossing Template Fabrication

 

 



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