Electron beam lithography (EBL) has long been established as the premier technique for defining structures at the nanoscale. Since it’s inception in 1979, the Cornell Nanoscale Science and Technology Facility (CNF) has remained at the forefront of nanofabrication research by providing state-of-the-art EBL tools to the academic and industrial user community. CNF has excelled in the application of EBL to research areas ranging from electronic devices and integrated optics to the emerging fields of nanoelectromechanical systems (NEMS), nanobiotechnology and nanomagnetics. Breakthroughs in these fields are a direct consequence of the unique lithographic processing capabilities developed at CNF over the past 25 years. These include:
The ability to reproducibly achieve feature sizes below 20 nm
Multilayer lithography with less than 20 nm overlay
Mix and match EBL and photolithographic processing
Nanoimprint template fabrication
Patterning on thin silicon and silicon nitride membranes
Substrate handling from small pieces to 300 mm wafers and 3” to 7” photomasks
CNF is currently meeting the demands of scientists working in the broad field of nanoscale science and engineering by providing two high resolution direct write EBL tools. These systems are available 24 hrs a day year round. Our qualified staff has a proven track record of guiding users through complex processing using EBL. Combined with a full suite of optical lithography, thin film deposition, thin film patterning and advanced metrology equipment, CNF is the right place to explore the world of nanoscale science.
A brochure detailing the CNF EBL capabilities and recent results by our EBL users is available on our brochures page.
The JEOL features an advanced electron optical column allowing it to reproducibly write sub-twenty-nanometer features. An integral part of this design is the electron gun. An extremely stable thermal field emission electron source operated at 100 keV is used to produce writing currents from 50 pA to 50 nA and is capable of producing a minimum spot of 4 nm. The 500 µm patterning field can be addressed on a 1 nm grid using a 20-bit deflection system. This effectively eliminates patterning defects due to grid placement errors. The precision alignment system is capable of minimizing overlay errors to less than 20 nm for multilayer lithography. Stitching accuracy of less than 20 nm can be reproducibly achieved. In spite of its complexity, the JEOL is controlled by a user friendly UNIX-based graphical interface.
More information on the JEOL 9300 FS