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PLASMA-THERM WORKSHOP:
Fundamentals of Plasma Processing
(Etching and Deposition)
Date: 21 August 2012, Tuesday
Location: 219 Phillips Hall,
Cornell University, Ithaca NY
SCOPE:
Plasma-Therm, one of the leading manufacturers of plasma based etching and deposition equipment, is providing a workshop focused on the fundamentals of plasma etching and deposition. Lectures will include the basics of plasma reactors and mechanisms for etching and deposition and will review current plasma processing technologies as applied to semiconductor, MEMS, and nanofabrication. Talks will cover compound semiconductor, dielectric, and deep silicon etching as well as PECVD and high density plasma CVD of silicon based materials. Essential concepts and new ideas for endpoint detection and sample thermal budget management will be presented along with an introduction to DOE and a concluding presentation on designing robust processes.
OBJECTIVES:
- Learn basic etching mechanisms
- Review current etching technologies for deep silicon etching, compound semiconductors, and dielectrics
- Provide essentials of PECVD and HDPCVD
- Explore the fundamentals and new ideas in endpoint detection
- Understand thermal budget considerations
- Introduction to basic design-of-experiments and metrology
- Design guidance for robust processes
REGISTRATION IS NOW CLOSED
Speaker Information: David Lishan, Principal Scientist, Ph.D.
David Lishan received his Bachelor's degree in Chemistry from UC, Santa Cruz, and M.S. and Ph.D. from UC, Santa Barbara, in Solid State Electrical Engineering. During his career he has worked and published on wide range of material, semiconductor, and chemistry R&D projects in the areas of photochemistry, x-ray mask fabrication, PVD, and plasma processing. He joined Plasma-Therm nearly 14 years ago and currently holds the position of Principal Scientist and Director in the Technical Marketing Group. His primary focus is on the application of plasma processing for MEMS, photonics, data storage, and compound semiconductor applications.
PROGRAM: (subject to change)
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7:30 - 8:00 a.m. | Registration and light breakfast (provided by Plasma-Therm)
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8:00 - 8:15 a.m. | Welcome | |
8:15 - 9:45 a.m. | Basics: Plasma and Reactors
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9:45 - 10:00 a.m. | Break | |
10:00 - 11:00 a.m. | Plasma Etching Mechanisms | |
11:00 - 12:00 p.m. | Compound Semiconductor Etching
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12:00 - 12:45 p.m. | Networking Lunch (provided by Plasma-Therm) | |
12:45 - 1:30 p.m. | Dielectric Etching
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1:30 - 2:15 p.m. | Deep Silicon Etching
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2:15 - 2:45 p.m. | Endpoint Basics | |
2:45 - 3:15 p.m. | Thermal Budget Management | |
3:15 - 3:30 p.m. | Break | |
3:30 - 4:45 p.m. | PECVD and HDP CVD (high density plasma CVD)
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4:45 - 5:15 p.m. | Introduction to DOE
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5:15 - 5:45 p.m. | Designing a Robust Process
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5:45 p.m. | Q&A
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For general and registration inquiries, please contact: Ms. Melanie-Claire Mallison
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