Equipment Resources

The ABM High Resolution Mask Aligner is a very versatile instrument with interchangeable light sources which allow Near-UV (405-365 nm) as well as Mid-and Deep-UV (254 nm, 220 nm) exposures in proximity (non-contact) or contact (soft & hard) modes.

The ASML PAS 5500/300C DUV Wafer Stepper is our most advanced photolithography tool. It uses a KrF excimer laser to expose features smaller than 0.2 micrometers with layer-to-layer registration better than 45 nanometers.  This projection printer uses a DUV (248nm) lens column (0.63 N.A.) to provide a 4:1 reduction with an exposure field size up to 22mm square. 

The GCA 6300 DSW 5X g-line Wafer Stepper is a 5X reduction stepper using the mercury g-line (436 nm) with an ultimate resolution of 0.9 micrometers. It is generally used when depth of field is more important than resultion.  This projection printer uses a lens column with 0.30 N.A. to provide a 5:1 reduction with a variable field size up to 15mm square.

The GCA AutoStep 200 DSW i-line Wafer Stepper is a 5X reduction wafer exposure tool designed for up to 200mm wafers. All operations are automated, including wafer loading (100mm wafers) and aligning, and reticle loading and aligning (5").  Resolution is better than 0.65um.

The DW2000 is an advanced laser writing system for mask fabrication. It can write mask features as small as 0.8 micrometers.

The Heidelberg Instruments MLA 150 is a maskless aligner for direct-write lithography. Our machine is equipped with write mode I for feature sizes down to 0.6 micrometers and feature separation down to 0.8 micrometers. It has a gray scale exposure mode, both front and backside alignment capability, both 405 nm and 375 nm exposure wavelengths, field by field wafer mapping alignment, and many other capabilities. It accommodates substrates from 5 mm to 225 mm, with thicknesses up to 12mm. It performs all tasks of the DWL 66 it replaces, but faster and with better precision.

Alignment accuracy is 250 nm for local alignment, 500 nm for global alignment, and 1000 nm for backside alignment. The maximum writing speed is 285 mm²/min for both wavelengths.

The Nanoscribe GT2 Laser Lithography System is a two-photon polymerization (2PP) volumetric printer. It can create three-dimensional nanostructures using a NIR femtosecond laser via direct-write onto a photosensitive resin that is subjected to a non-linear two-photon absorption process. This process involves cross-linking the resin via UV absorption. Designs are loaded as STL files, sliced by the DeScribe software and printed layer by layer with one of three objectives (10×, 25× and 63×), with better resolution at higher magnification (at the cost of lower speed) down to a minimum feature size of 0.2 μm.

The MA6 is a workhorse contact lithography system (contact aligner) for up to 150 mm wafers. It can align to features on either the front or the back of the wafer using a video alignment system.

The MJB4 contact aligner can be used for Topside Alignment and Backside Infrared Alignment on substrate sizes ranging 5mm square to 100mm in diameter. It is capable of printing 0.7um lines and spaces with a 365-436nm light source

The YES PB8 450 is a high temperature vacuum oven using a programmable temperature controller and programmed vacuum and nitrogen flow cycles for curing of polyimide, SU8, BCB, and other films. The unit features filtered heated nitrogen purging the chamber in a laminar flow and acting to clean the wafers during the process.

The JBX 6300FS system is an advanced direct write ebeam lithography system for up to 150mm wafers. The unique capability of the JEOL 6300 is that a fifth lens can be used to get a smaller beam spot size and write sub-10 nm features.

The JBX-9500FS is the next generation direct write e-beam lithography system from JEOL. CNF has one of only two 9500s in the U.S., and the only one in an academic environment. The tool is capable of loading samples from 10 mm up to 300 mm and writing features as small as 6 nm or less at 100 MHz clock speed. The system features dramatically improved stitching and overylay over previous systems.

The Nabity system turns an SEM into a simple e beam lithography system. The pattern generator takes control of the deflection system on the SEM and can then be used to expose patterns in resist. This is particularly useful when there is a need for low energy exposures. The tool is very manual, as opposed to the fully automated JEOL systems.

The NX-2500 is a multi-level nanoimprint machine with imprint capabilities in thermoplastic, photo-curable and embossing. This machine also eliminates relative lateral shifting between substrate and mold which affects mold lifetime. A very small thermal mass, ensure rapid and cooling, resulting in fast process cycles.

Hot plate for heating 300 mm wafers, and also other large substrates such as large glass plates used for displays.

Spinner for applying resist on 300 mm wafers, and also on photomasks and large glass plates, such as substrates for displays.

1300X hotplates are configured for proximity baking of resist and other films at various temperatures from 90C to 205C.

Cee manual resist spinners accommodate substrates from small pieces to 200mm wafers, with spin speeds over 6000 rpm and acceleration up to 30,000 rpm/sec.

This Edge Bead Removal System uses a Brewer Science Cee Flange Spinner Model 200 platform along with a Nordson 752 Series Diaphragm Dispense Valve and their patented BackPack valve actuator controlled by their ValveMate 8000 Controller. The nozzle is mounted on a 4-axis cantilevered T-Slot arm with position micrometer on the X-axis for adjusting the bead size. It utilizes Microposit EBR 10A as a solvent.

The Suss MicroTec Gamma Cluster Tool is an automated photoresist and wet processing system designed to meet needs for clean, reliable and high throughput photolithography processing.  In addition to the manual facilities used for small lots, CNF has this advanced robotic coating/development system which can process cassettes of wafers up to 200 mm. It also incorporates the AltaSpray spray coating system for non-planar substrates.

The Hamatechs are single wafer automated chemical processors. CNF has a total of six of these units, configured for various cleaning, stripping, and resist development processes.

CNF has three Yield Engineering Systems ovens, a Vapor Priming vacuum oven, an Ammonia Image Reversal oven, and a Polyimide Curing oven. All three systems allow fully programmed operation.

CNF has three AJA magnetron sputtering systems that can be used to deposit a variety of materials. The systems are load locked, allowing rapid sample exchange. Each system has five S-gun type sputtering sources. Both DC and RF magnetron sources are available.

The AJA Quantum Materials Deposition System is a multifunctional phyisical vapor deposition that is dedicated to quantum materials research activities. The tool has a loadlock with in situ ion mill and controlled oxidation system capable of oxidizing films at 10 and 100 Torr. The main chamber has 3 standard magnetron sputter sources and an adjustable proximity sputter source. The chamber also has an in situ ion mill for substrate cleaning and a 6 pocket electron beam evaporation system with a loadlocked crucible exchange

The AJA Quantum Materials Sputter Deposition System is a loadlocked UHV sputter deposition system equipped with a variety of functionalities to enable the creation of next generation quantum devices. Unique to this system is the ability to perform low energy sputter deposition via two adjustable distance, opposing sputter sources positioned perpendicular to the substrate.

This is a load lock E-Beam evaporator.

The CHA thermal evaporator is the only PVD tool at the CNF designated for depositing thin films on substrates that are composed of high vapor pressure materials.

The large chamber on this electron beam evaporator enables users to deposit metals on moderately sized production runs. The tool is capable of conformal evaporation on 4” and 6” wafers and has liftoff platens for 4”, 6” and 8” wafers.

The Endeavor is a specialized magnetron sputtering tool for the deposition of piezoelectric Aluminum Nitride on up to 150 mm wafers.

The PVD75 is a small box coater for reactive sputtering Indium Tin Oxide (ITO), a transparent conductor and Titanium Dioxide (TiO2).

CNF has two CVC cryopumped evaporators used for thin film depositions. The Odd-Hour is capable of both thermal and electron beam evaporation. The Even-Hour has a six-pocket electron-beam crucible turret and is designated for low temperature oxide and nitride depositions.

This system is solely configured for thermal ALD and presently has precursors for Al, Ti, Hf, and Zr. The system also has an ozone generator which allows films to be deposited at lower temperatures. It is uniquely configured for ALD of nanoparticles in either a static or rotational mode. The following films can be deposited: HfO2, Al2O3, TiO2, TiN, and ZrO2.

This system has both thermal and (remote)plasma enhanced atomic layer deposition. The system has precursors for Al, Ta, Hf, and Si. The oxides and nitrides of these elements can be deposited, as well as tertiary compounds such as HfAlOx, HfSiOx, and HfSiOxNy. Films can be deposited up to 400C.

The Oxford 100 PECVD is a (capacitively coupled) plasma enhanced CVD tool for deposition of silicon dioxide and silicon nitride.

High density plasma deposition for high density films at low temperatures

Rapid Thermal Annealers (AG Heatpulse 610) use high intensity, visible radiation to heat samples (up to 150mm) for short periods (1-600 seconds) at high temperatures (400-1150 C) in an annealing ambient of oxygen, argon, nitrogen, or forming gas (5% H2 in Ar). Applications include ion implant activation, annealing, oxide reflow, silicide formation, contact alloying, and gallium arsenide processing.

Veeco Savannah tool is dedicated to the Atomic Layer Deposition of metal.

The AJA Ion Mill is a 22 cm diameter Kaufman RF-ICP gridded ion source producing a collimated Argon ion beam which provides uniform etching of samples up to 6 inch diameter. The sample holder is water cooled at 23 degrees C. and has motorized tilt (0-180 degrees), and continuous sample rotation up to 25 RPM. The system is Cryo Pumped with a base pressure in the 10-8 torr range. It is generally used for materials for which there is no appropriate chemical/plasma etch.

The Anatech USA, model SCE-110-RF, Oxygen plasma Asher is a 10 inch diameter all quartz barrel asher. It is ICP powered 13.56 MHz up to 900 Watts. It is equipped for both oxygen and nitrogen plasma. It can process small pieces and up to 200 mm wafers.

The Glen 1000 system utilizes a oxygen plasma source for stripping of photoresist and other organics. The tool can be setup to give direct ion bombardment or in a downstream ion mode for lower surface damage. Nitrogen is also available.

This ICP system is dedicated to silicon based dielectrics (SiO2, Si3N4, SiOxNy) and is uniquely equipped with a gas ring in addition to traditional shower head gas delivery of highly polymerizing fluorocarbon and hydrofluorocarbon gases. Gases include CF4, CHF3, C4F8, C4F6, CH2F2 as well as additives such as O2, Ar, He, and CO2. This system is mechanically clamped and can accommodate up to 100mm diameter wafers.

CNF has two Oxford 80 open load reactive ion etching systems configured with varous fluorocarbon gases, primarily for etching silicon based films.

This ICP system is configured with chlorine, bromine, and fluorine chemistry. This system is used to etch silicon and germanium photonics structures using HBr, magnetic tunnel junction (MTJ) layers using methanol (CH3OH) based chemistry, and silicon carbide with an SF6 based etch. Fluorine based metal etches such as tungsten are also included in this system. This system is mechanically clamped and can accommodate up to 100mm diameter wafers.

The Versaline DSE is an advanced deep Silicon etcher configured for fast switching Bosch processes. It can create high aspect ratio trenches and channels in Silicon wafers, or completely etch through Silicon wafers.

Able to etch through Silicon wafers with photoresist mask all the way to the edge of the wafer. Works with chips or wafers up to 200mm.

This system is primarily used to isotropically etch silicon dioxide using anhydrous vapor HF. The VHF/alcohol process enables release of silicon MEMS structures without stiction. It is highly selective to silicon, alumina, aluminum, and silicon carbide.

The Plasma Therm System 72 is open load reactive ion etching systems configured with various fluorocarbon gases, primarily for etching silicon based films.

This is a dual chamber RIE loadlocked system with both chlorine and fluorine based chemistry. The 740 (left chamber) has been designated a Au exposure system. It can be used to etch metals and dielectrics with either Au exposure or termination. The 720 (right chamber) is designated for chlorine and fluorine based etching of 2D materials such as MoS2, WSe2, NbSe2, AsSe2, and GaSe and perovskites such as SrRuOx, SrLaAlOx, and BaSrOx. Both chambers can accommodate up to 200mm diameter wafers.

This is a dual chamber loadlocked ICP system with both chlorine and fluorine based chemistry. The left chamber is for chlorine based metal, metal oxide, and metal nitride etching including Cr, Ti, Al, Al-Si-Cu, Ta, Al2O3, Nb, TiN, TaN, AlN, piezo-AlN, and MoSi2. The right chamber is dedicated to III-V materials and includes gases such as Cl2, BCl3, CH4, H2, and SiCl4. Both chambers are mechanically clamped and can accommodate up to 100mm diameter wafers.

Utilizes UV light, heat, and Ozone for the removal of organic contamination as well as th e descumming, UV curing, and stripping of resist.

The Trion is a small load-locked ICP system with BCl3, Cl, CHF3, CF4, O2, N2, O2, and Ar f or etching a wide variety of materials.

The Unaxis 770 is a deep silicon etcher that utilizes the Bosch process as well as other unique processes developed at CNF.

This system is primarily used to isotropically etch silicon, Ge, Mo and any materials that react spontaneously with atomic fluorine. One of its main purposes is to release MEMS structures by etching sacrificial materials without stiction. XeF2 is highly selective to silicon oxide, polymers, and most metals.

Vacuum system with Oxygen Plasma, designed for Resist Stripping and Descum. It uses a 9" diameter Hot Plate stage to control wafer temperature. The system is used to strip resist off single wafers, up to 8" diameter. The 40 KHz plasma is isolated from the wafer by a grounded, perforated metal plate, making this a Down Stream system.

The YES EcoClean is a single wafer, downstream ICP stripper designed for photoresist and polyimide strip, descum, and inorganic substrate cleaning/surface modification. The remote ICP source produces a high-density oxygen plasma and confines any charged plasma species to the plasma chamber such that only charge-neutral species flow from the source to the substrate. The tool can process silicon and gallium arsenide wafers of 2", 3", 4", 5", 6", and 8" diameter. Tool capabilities include 3,000 W RF power and hot plate temperature up to 300 C for fast resist removal.

The AFM Bruker Icon is an atomic force microscope which operates in both contact and tapping mode to map surface topography of a solid substrate. Tool can scan 100 um X 100 um of surface area and measure trenches as deep as 13.7 um. It accepts smaller pieces and whole wafers (magnetic pucks are available for the smaller pieces).

A small sputter system for sputtering thin conductive coatings on samples prior to SEM imaging or electron beam lithography. It is setup for Gold / Palladium. The manual machine allows for quick coating of conductive films to assist in electron beam work Polaron Gold Sputter SystemA small sputter systems for coating samples prior to SEM imaging or electron beam lithography. This system is setup for Gold, typically used in electron beam writing. The manual machine allows for quick coating of thin conductive films to assist in electron beam work.

CNF has two Zeiss digital field emission scanning electron microscopes, an Ultra 55 and a Supra 55VP. The Ultra features a more advanced detector, while the Supra has capabilities for charge compensation for insulating materials. An EDX for materials characterization is also available on the Supra.

The Bruker QUANTAX 200 Energy Dispersive X- ray Spectrometer (EDS) with XFlash®6 silicon drift detector is a modular EDS system for qualitative and quantitative microanalysis. The system’s standard-less quantification software enables manual, automatic or interactive spectra evaluation and provides reliable results for specimens with polished or irregular surfaces, thin layers and particles.

CNF has several Filmetrics spectrophotometers for measuring the effective thickness of transparent thin films, including systems for microspot measurement and wafer mapping.

A laser scan technique is used to measure wafer surface curvature before, and after wafer processing. Two wavelengths (670 nm and 780 nm) are available to ensure adequate reflected signal from the wafer. The calculated change in wafer curvature is then used to calculate the stress in the film. The wafer is scanned on a hot plate which can be programed for stress vs. temperature measurements.

The Metricon is a prism coupler for precision measurement of optical index of transparent thin films.

A profilometer is a precision metrology tool used to measure surface characteristics in the micron to nanometer scale. It is an ideal tool for measuring step heights. This is useful for measuring film thickness, etch depth, surface roughness, wear-scar measurements. Many parameters of surface roughness and waviness can be measured. The P-7 is a stylus-based surface profiler, with motorized XY stage with vacuum hold down, and a wide range of scan parameter settings.

This can be a useful tool for very quick and easy measurement of resist thickness and uniformity.  The resist index of refraction needs to be known for accurate thickness measurement..   Measurement range is only about 300 nm to 5 microns.

The Schott IR Inspection Tool is a general all-purpose semi-automatic inspection tool for the front side, buried layers, and backside inspection. The machine can handle substrates size up to 200mm in Diameter. The Schott IR Inspection can be utilized for void detection and quality of bonds in wafer bonding. It also serves as a good way to detect chipping and cracking post-CMP and post-Dicing for top and buried layers

The VCA is able to measure the water contact angle on wafer surfaces up to 6 inch in diameter. It is a useful metrology tool for measuring the quality of surface treatments put down in the Applied Microstructures MVD100 tool.

The Woollam RC2 is a modern automated variable angle spectroscopic ellipsometer. It can also be used to extract both optical indexes and film thicknesses for components in a thin film stack. Newer technology enables measurements on the order of 100 times faster than the Woollam WVASE, mapping of thickness and optical properties, and measurement of anisotropic materials.

The Woollam V-VASE is a variable angle spectroscopic ellipsometer. It can be used to extract both optical indexes and film thicknesses for components in a thin film stack.

This tool is configured around a Cascade Summit 12K probe station, including four Kelvin probes each mounted on a Cascade 208 or 210 probe positioner, an Agilent 4156C precision semiconductor parameter analyzer, an Agilent 4294A precision impedance analyzer, a Temptronic TPO3000 ThermoChuck system, a Kinetic Systems 1201 vibration-isolation table, and a personal computer running Keysight IC-CAP on Windows 10.

This tool is based on a Cascade Summit 9600 probe station on top of a Kinetic Systems 1201 vibration-isolation table. The probe station is equipped with two Cascade 103-754 x-y-z-θ probe positioners, a Mitutoyo 378-134-4 microscope (with long working distance and a built-in TV camera), and a 6"-diameter microchamber and thermal chuck (−50 to 200 °C). The thermal chuck is controlled by a Temptronic TPO3000 ThermoChuck system. The RF signal path consists of an Agilent E8364B vector network analyzer, two flexible 2.4-mm-diameter coaxial cables, two Agilent 11612V bias tees (capable of pulsed biases), two 2.4-mm semflexible cables, and two 2.4-mm probes, although 2.9-mm probes can also be used with 2.4mm-2.9mm adapters. The DC bias is supplied by an Agilent 4156C precision semiconductor parameter analyzer. Both DC and RF signals are controlled by a personal computer running Keysight IC-CAP on Windows 10.

A Cascade Summit 11K probe station with a 200-mm wafer chuck is available for Terahertz large-signal probing. The tool includes Anritsu MS4647B 4-Port 70kHz-70GHz VNA, two VDI 110-170 GHz frequency extenders, power meters covering DC to THz range, and GSG or GSGSG probes for on-wafer probing. The tool is capable of both small- and large-signal RF measurements up to 170 GHz and 17 dBm power.

The tool is based on an MPI TS2000-IFE 200-mm automated probe station with micron precision. In the standard configuration, the tool includes two RF probes of GSG, GSSG or GSGSG types, a microscope, a digital camera, and a thermal chuck with temperature control between -60°C and +200 °C. Other DC and RF probes may be added. The probes, the microscope, and the chuck are all automatically controlled in x, y, and z directions with optical feedback. The RF signal is provided by an Anritsu 4-Port ME7838G vector network analyzer capable of a single sweep from 70 kHz to Fig. 2. HFTL Terahertz small-signal 220 GHz. Up to 12 DC bias can be supplied by an Agilent 4156C probe station precision semiconductor parameter analyzer capable of +/-200 V, 0.5 A, and 100 V/us pulses, and two Agilent 6629A system DC power supplies capable of +50 V and 2 A. The tool is fully automated as controlled by MPI Sentio, MPI QAlibria, and Keysight IC-CAP software.

The Zyvex S-100 Nanoprobes are installed on the Zeiss Ultra-55 SEM and operate under vacuum during imaging or with the beam blanked. The S-100 consists of three individually controlled nanoprobes which can be placed with a precision of five nanometers. The probes have a minimum tip radius of fifty nanometers for precision measurements.

The Tousimis Critical Point Dryer is used to prevent surface tension while gently drying devices such as MEMS and Microfluidics  to prevent stiction after a wet etch process. This tool can handle samples from small pieces up to 6" wafers.

The Disco Dicing Saw can dice device sizes from small pieces up to 8" wafers. It can dice wafers on simple basic X Y axis or advanced settings for multiple angles. There are two standard blades that we use for dicing different types of substrates such as Silicon and many types of Glass. As well as  some specialty blades for various other substrate.

The Logitech Orbis is a CMP tool capable of polishing 4 and 6 inch whole wafers. It can do automatic multistep polishing processes with diamond disk pad conditioning to maintain etch rates stability. The tool can be used for planarization or for damascene polishing of silicon oxide, silicon nitride, polysilicon, copper, tungsten, and other various metals.

This tool is capable of depositing conformal monolayer coatings on a wide variety of substrates using a vapor phase process from liquid precursors.

The ObJet30 Pro prints proprietary UV-curable polymers that mimic acrylic or polypropylene.

The FLIPCHIP,  FINEPLACER pico ma uses a precision optical system to align patterns on a small chip ( up to 20 x 20 mm) over patterns on a substrate (up to 100 x 100 mm, ). Alignment and placement  accuracy is 5 microns. The two devices are then pressed together with a force, up to a maximum of 20 N (4.5 lb.). Temperature profiles (up to 450 deg. C) for the substrate support and for the chip holder are programmable for solder re-flow, or solder paste. A fiber optic UV source is also available for UV curing adhesives. A dispensing system is available for adhesives or solder pastes.

The tool is now located in Phillips Hall 154

The Suss SB8e VAC substrate bonder is a universal tool for bonding proses for micro-electro-mechanical system applications such as Anodic Bonding, Silicon Fusion Bonding, Adhesive Bonding, and Thermal Compression Bonding. This tool can sustain wafers up-to 150mm. It can vacuum down to 5x10e-5 mbar with an overpressure up-to3 bar. The bonding process takes place in a controlled environment.

The Universal Laser Systems VersaLaser VLS3.50 is a CO2 laser that emits in the infrared spectrum to cut or etch patterns by vaporizing the substrate.

A wire bonder is used to connect the micron-scale pads of your device to the pads, or leads, in a package. This wedge-wedge ultrasonic type wire bonder (aka, wedge bonder) is currently being used with 1.25 mil aluminum wire. Minimum practical bond pad size is 100 microns square. It is now equiped with a Trinocular Stereo microscope, with TV camera, and viewing screen.

The Corsolutions Fluidic probe station is for quick testing of microfluidic devices. It features special fluid probes for contacting the device and precision pumps with integrated flow meters for measuring flow.

The Zetasizer characterizes nanomaterials in a solution. It uses Dynamic Light Scattering to determine the polydispersity of a sample and measure particle charge and size.

The NanoSight uses the technology of Nanoparticle Tracking Analysis (NTA) to characterize nanoparticles from 30 to 800 nanometers in liquid.