Ion milling system for physical sputter etching of substrates

Description:

The vacuum system is Cryo pumped, and equiped with a water cooled substrate stage which can tilt up to 90 degrees, and rotate the wafer. A 10 cm Kaufman Argon Ion beam source is used to sputter etch substrates up to 4 inch diameter. Small pieces are also easily used. Patterned etching can be done with hard masks, or very carefully with a photoresist mask. Relative removal rates for different materials are generally proportional to published sputter yield rates.