Unaxis 770 Deep Si Etcher
Bosch Etcher for deep silicon etching
Manager: Tom PennellBackup: Vince Genova , Christopher Alpha
A single chamber (licensed Bosch fluorine process) inductively coupled plasma / reactive ion etcher, the Unaxis SLR 770 etcher is used to etch deep patterns in single crystal silicon substrates. The resulting features are used for MEMS and biological applications. Etch rates of up to 2 microns per minute and aspect ratios of 20:1 can be obtained using photoresist or silicon dioxide as a masking medium.
Additional Resources:Etch Baseline Data
Baseline Etch Process Flow
Location of tool in cleanroom (jpg)
Back to Top
This material is based upon work supported by the National Science Foundation under Grant No. NNCI-1542081. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.
If you have a disability and are having trouble accessing information on this website or need materials in an alternate format, contact email@example.com for assistance.
Cornell NanoScale Science & Technology Facility (CNF)
250 Duffield Hall, Cornell University, Ithaca, New York 14853-2700
Voice: 607-255-2329, Fax: 607-255-8601, Email: firstname.lastname@example.org
Powered by ITX