CNF - Lab and Equipment Information

Unaxis 770 Deep Si Etcher

Bosch Etcher for deep silicon etching

Manager: Meredith Metzler

Backup: Vince Genova

Description:

A single chamber (licensed Bosch fluorine process) inductively coupled plasma / reactive ion etcher, the Unaxis SLR 770 etcher is used to etch deep patterns in single crystal silicon substrates. The resulting features are used for MEMS and biological applications. Etch rates of up to 2 microns per minute and aspect ratios of 20:1 can be obtained using photoresist or silicon dioxide as a masking medium.

Capabilities:

Load Locked sample introduction
4
High selectivity single crystal silicon etch with resist masking
Through wafer single crystal silicon etch with silicon dioxide masking

Additional Resources:

Etch Baseline Data
Baseline Etch Process Flow

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This material is based upon work supported by the National Science Foundation under Grant No. ECS-0335765. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.

Cornell NanoScale Science & Technology Facility (CNF)
250 Duffield Hall, Cornell University, Ithaca, New York 14853-2700
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