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Unaxis 770 Deep Si Etcher

CAC Name: UN 770

Bosch Etcher for deep silicon etching

Manager: Tom Pennell
Backup: Vince Genova , Christopher Alpha
Equipment Training
Training is conducted on an as needed basis with groups of 4 or 5 people. Please contact tool manager via email to schedule a session. The training sessions will usually be on Wednesday mornings.


A single chamber (licensed Bosch fluorine process) inductively coupled plasma / reactive ion etcher, the Unaxis SLR 770 etcher is used to etch deep patterns in single crystal silicon substrates. The resulting features are used for MEMS and biological applications. Etch rates of up to 2 microns per minute and aspect ratios of 20:1 can be obtained using photoresist or silicon dioxide as a masking medium.


  • Load Locked sample introduction
  • 4
  • High selectivity single crystal silicon etch with resist masking
  • Through wafer single crystal silicon etch with silicon dioxide masking

Additional Resources:

Equipment Information Sheet
Etch Baseline Data
Baseline Etch Process Flow
Location of tool in cleanroom (jpg)

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