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Unaxis 770 Deep Si Etcher

Bosch Etcher for deep silicon etching

Backup: Vince Genova

Description:

A single chamber (licensed Bosch fluorine process) inductively coupled plasma / reactive ion etcher, the Unaxis SLR 770 etcher is used to etch deep patterns in single crystal silicon substrates. The resulting features are used for MEMS and biological applications. Etch rates of up to 2 microns per minute and aspect ratios of 20:1 can be obtained using photoresist or silicon dioxide as a masking medium.

Capabilities:

  • Load Locked sample introduction
  • 4
  • High selectivity single crystal silicon etch with resist masking
  • Through wafer single crystal silicon etch with silicon dioxide masking


Additional Resources:

Etch Baseline Data
Baseline Etch Process Flow


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