CAC Name: PT 770

PlasmaTherm 770 two chamber inductively coupled plasma etching system for plasma etching using Chlorine or Fluorine

Description:

The PT770 is a dual chamber ICP system. The left chamber is dedicated to shallow(<10u) silicon etching (both polycrystalline and single crystal)in chlorine chemistry. Only oxide masking is allowed in this chamber and etch rates up to 0.5u/min are possible. The right chamber is dedicated to III-V materials only (no bulk silicon). It is equipped with both chlorine and methane based chemistry. Materials such as GaAs, InP, GaN and associated tertiaries and quarternaries can be etched successfully.

Capabilities:

• Load Locked sample introduction
• 3
• Turbomolecular pumping
• Microprocessor etch recipe control
• Shallow silicon etching with oxide masks-left chamber
• III-V based materials etching in the right chamber

Additional Resources: