CNF - Lab and Equipment Information

PT770 Etcher

PlasmaTherm 770 two chamber inductively coupled plasma etching system for plasma etching using Chlorine or Fluorine

Manager: Meredith Metzler

Backup: Vince Genova , Jerry Drumheller

Description:

The PT770 is a dual chamber ICP system. The left chamber is dedicated to shallow(<10u) silicon etching (both polycrystalline and single crystal)in chlorine chemistry. Only oxide masking is allowed in this chamber and etch rates up to 0.5u/min are possible. The right chamber is dedicated to III-V materials only (no bulk silicon). It is equipped with both chlorine and methane based chemistry. Materials such as GaAs, InP, GaN and associated tertiaries and quarternaries can be etched successfully.

Capabilities:

Load Locked sample introduction
3
Turbomolecular pumping
Microprocessor etch recipe control
Shallow silicon etching with oxide masks-left chamber
III-V based materials etching in the right chamber

Additional Resources:

Etch Baseline Data

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This material is based upon work supported by the National Science Foundation under Grant No. ECS-0335765. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.

Cornell NanoScale Science & Technology Facility (CNF)
250 Duffield Hall, Cornell University, Ithaca, New York 14853-2700
Voice: 607-255-2329, Fax: 607-255-8601, Email: information@cnf.cornell.edu