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PT72 Etcher

PlasmaTherm 72 Fluorine based Reactive Ion Etcher

PlasmaTherm 72 RIE System
Manager: Meredith Metzler
Backup: Vince Genova

Description:

This 10-inch diameter parallel plate, turbo-pumped RIE system is dedicated to applications involving fluorine based plasmas including CHF3, CF4, and SF6. Applications include anisotropic etching of silicon, silicon dioxide and silicon nitride. Etch rates of common materials vary from about 10 nm/min up to 50 nm/min.

Capabilities:

  • Fluorine based gases CHF3, SF6, CF4
  • Turbo molecular pumped
  • Micro processor controlled
  • 5% uniformity
  • 10-1000 mT processing pressure
  • Controlled anisotropic etching
  • Variable gas chemistry
  • Selective etching


Additional Resources:

Etch Baseline Data
Baseline Etch Process Flow


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This material is based upon work supported by the National Science Foundation under Grant No. ECS-0335765. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.

Cornell NanoScale Science & Technology Facility (CNF)
250 Duffield Hall, Cornell University, Ithaca, New York 14853-2700
Voice: 607-255-2329, Fax: 607-255-8601, Email: information@cnf.cornell.edu
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