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THIN FILM DEPOSITION
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GSI PECVD
CAC Name: GSI GSI Plasma Enhanced Chemical Vapor Deposition System 
Manager: Phil Infante
Equipment Training
Training is scheduled by need, please email requests for training to the tool manager. You will be emailed when the next available training is set up. Description:The load-locked GSI Plasma Enhanced Chemical Vapor Deposition (PECVD) system can conformally deposit a variety of dielectric films as well amorphous silicon on whole 100 and 150 mm diameter wafers. Dual frequency RF power supply allows tuning of the film stress. The deposition temperature can be varied from 200 - 400 °C. Deposition rates range from 100 - 400 nm/min Processes Available:
Additional Resources:Equipment Information SheetGSI instructions 9_20_02 update Process Data 6_22_05 update.xls Back to Top |
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ALD service scheduled extended to May 24
May 17, 2013 The system will be unavailable until May 24. 
THIN FILM DEPOSITION
1. SC4500 Odd-Hour Evaporator 2. SC4500 Even-Hour Evaporator AJA Sputter Deposition CHA Evaporator CVC Sputter Deposition Electroplating Tanks GSI PECVD Oxford ALD FlexAL Oxford PECVD Parylene Deposition PVD75 Sputter Deposition ReynoldsTech Conductive Polymer Vapor Deposition Tool Back to Equipment List |
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This material is based upon work supported by the National Science Foundation under Grant No. ECS-0335765. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation. Cornell NanoScale Science & Technology Facility (CNF) 250 Duffield Hall, Cornell University, Ithaca, New York 14853-2700 Voice: 607-255-2329, Fax: 607-255-8601, Email: information@cnf.cornell.edu Powered by ITX |
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