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THIN FILM DEPOSITION
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Oxford PECVD

CAC Name: PECVD

Oxford 100 PECVD System

Manager: Tom Pennell
Backup: Phil Infante
Equipment Training
Training is performed on a request basis, please email the tool manger to request training. You will be emailed when then the next training is scheduled.

Description:

Currently available are a high rate oxide (250nm/min) and a low stress silicon nitride.

Currently being characterized to be added in the near future is a-silicon, doped oxides, SiC, and TEOS Oxide.

Capabilities:

  • Low pressure plasma decomposition/reaction of silane & other gases predominantly to form dielectrics for passivation & masking layers at low temperatures
  • Load Locked system capable of 3
  • Gases: SiH4, N2O, NH3, PH3, B2H6, CH4, TEOS, CF4, and O2
  • Typical process pressure: 1.8 Torr
  • Process temperature range of 200 to 400 C


Additional Resources:

Equipment Information Sheet
Oxford PECVD Instructios updated.doc


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This material is based upon work supported by the National Science Foundation under Grant No. NNCI-1542081. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.

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Cornell NanoScale Science & Technology Facility (CNF)
250 Duffield Hall, Cornell University, Ithaca, New York 14853-2700
Voice: 607-255-2329, Fax: 607-255-8601, Email: information@cnf.cornell.edu
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