CNF - Lab and Equipment Information - IPE PECVD

THIN FILM DEPOSITION

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CAC Name: PECVD

Oxford 100 PECVD System

IPE PECVD System

Manager: Phil Infante

Equipment Training
Training is performed on a request basis, please email the tool manger to request training. You will be emailed when then the next training is scheduled.

Description:

Currently available are a high rate oxide (250nm/min) and a low stress silicon nitride.

Currently being characterized to be added in the near future is a-silicon, doped oxides, SiC, and TEOS Oxide.

Capabilities:

Low pressure plasma decomposition/reaction of silane & other gases predominantly to form dielectrics for passivation & masking layers at low temperatures
Load Locked system capable of 3" to 200mm wafers
Gases: SiH4, N2O, NH3, PH3, B2H6, CH4, TEOS, CF4, and O2
Typical process pressure: 1.8 Torr
Process temperature range of 200 to 400 C

Additional Resources:

Equipment Information Sheet
Oxford PECVD Instructios updated.doc

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ALD service scheduled extended to May 24
May 17, 2013
The system will be unavailable until May 24.

EQUIPMENT LIST

THIN FILM DEPOSITION

1. SC4500 Odd-Hour Evaporator
2. SC4500 Even-Hour Evaporator
AJA Sputter Deposition
CHA Evaporator
CVC Sputter Deposition
Electroplating Tanks
GSI PECVD
Oxford ALD FlexAL
Oxford PECVD
Parylene Deposition
PVD75 Sputter Deposition
ReynoldsTech Conductive Polymer Vapor Deposition Tool

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Cornell University

NYSTAR

NNIN

NSF

This material is based upon work supported by the National Science Foundation under Grant No. ECS-0335765. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.

Cornell NanoScale Science & Technology Facility (CNF)
250 Duffield Hall, Cornell University, Ithaca, New York 14853-2700
Voice: 607-255-2329, Fax: 607-255-8601, Email: information@cnf.cornell.edu