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IPE PECVD

IPE 1000 Plasma Enhanced Chemical Vapor Deposition System

IPE PECVD System
Manager: Phil Infante
Backup: Dan Woodie

Description:

Silicon dioxide, silicon nitride and amorphous silicon can be deposited at low temperatures (80-400°C) using this plasma enhanced chemical vapor deposition (PECVD) system. Due to its low temperature operation, this system is ideal for deposition on compound semiconductor and polymer substrates.

Capabilities:

  • Low pressure plasma decomposition/reaction of silane & other gases predominantly to form dielectrics for passivation & masking layers at low temperatures
  • 50 kHz, 1.2 KW power supply
  • Gases: SiH4, N2O, NH3, CF4/O2 (cleaning)
  • Typical process pressure: 500 millitorr
  • Standard Processes: Deposition of SiO2, Si3N4, amorphous Si
  • Low temperature: 80-400°C


Additional Resources:

ipe pecvd manual 06.dot


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This material is based upon work supported by the National Science Foundation under Grant No. ECS-0335765. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.

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