Button: Contact CNFButton: MultimediaButton: About CNF
Button: Getting StartedButton: PublicationButton: REU ProgramButton: Events & SeminarsButton: Education OutreachButton: TechnologiesButton: Lab Equipment

Button: Lab User


Oxford PECVD

Oxford 100 PECVD System

Manager: Phil Infante
Backup: Rob Ilic

Description:

Currently available are a high rate oxide (250nm/min) and a low stress silicon nitride.

Currently being characterized to be added in the near future is a-silicon, doped oxides, SiC, and TEOS Oxide.

Capabilities:

  • Low pressure plasma decomposition/reaction of silane & other gases predominantly to form dielectrics for passivation & masking layers at low temperatures
  • Load Locked system capable of 3
  • Gases: SiH4, N2O, NH3, PH3, B2H6, CH4, TEOS, CF4, and O2
  • Typical process pressure: 1.8 Torr
  • Process temperature range of 200 to 400 C


Additional Resources:

Oxford PECVD Instructios updated.doc


Back to Top




Button: Search Button: Search Keywords
Cornell University
NYSTARNNINNSF