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JEOL 9300

CAC Name: JEOL 9300

JEOL JBX-9300FS Electron Beam Lithography System - RETIRED

JEOL Ebeam Lithography
Manager: Daron Westly
Backup: Rob Ilic
Equipment Training
This training covers operation of the JEOL 6300 and the JEOL 9300.
Please sign up for training when you expect to have substrates to expose within 10 days of the training. If there is a long delay between training and exposing, you will have forgotten most of the training and it will be difficult to pick it up again.
To help us prepare for training, please copy the following text into an email message, fill in the information, and send it to bleier(at)cnf.cornell.edu , with copies to westly(at)cnf.cornell.edu , treichler(at)cnf.cornell.edu and rob(at)cnf.cornell.edu.

Your name, NetID or Guest ID, cell phone number if that's OK with you
Your Principal Investigator's name
Your Institution (university, company, etc.)
Brief description of project, including whether exposing whole wafers or small pieces and whether exposures are aligned.
A couple references to papers similar to your project.
Whether you have samples ready to expose now.
Please use the online training scheduler to sign up for e beam lithography training. The scheduler only lists the JEOL 6300 but the training covers both the JEOL 6300 and the JEOL 9300.

Description:

This tool is no longer available. It is currently being replaced by the JBX9500 due to come online sometime in March or April.

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Fueled by the demand for low cost portable devices, miniaturization technologies continue to play a major role in many electronic, mechanical, chemical and biological applications. By reproducibly achieving dimensional control on the nanometer scale, present high resolution electron beam lithography (EBL) fabrication techniques have bridged the gap between nanotechnology in a research lab environment and the creation of viable commercial products for established and emerging industries. The JEOL9300FS 100keV electron lithography system provides capability of reproducibly achieving feature sizes below 30nm. Additionally, multilayer EBL with less than 20nm overlay accuracy on a wide variety of substrates is achievable. 5” masks and wafer sizes of 3”,4”,6”,8", and 12” diameters can be accommodated, as well as smaller pieces. Please contact staff for details.

See the Computing page for Layout BEAMER instructions.

Capabilities:

  • Accelerating Voltage: 100kV, 50kV
  • 20-bit Pattern Generator
  • Pattern Generator Speed 50MHz
  • Field Size 1mm
  • 1nm address grid
  • Less than 20nm minimum resolution
  • Overlay: ± 25nm mean plus 3σ
  • Stitching: ± 25nm mean plus 3σ
  • Maximum wafer size: 12”
  • Maximum write area: 9”


Additional Resources:

Equipment Information Sheet
Quick Start Instructions
Operating System Overview
Electron Beam Resist Spin Curves

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Electron Beam Lithography General Training
May 13, 2013
Every Tuesday from 11:30 am to 2:00 pm in 254 Duffield Hall there will be a general introduction to electron beam lithography, which covers both the JEOL 6300 and the JEOL 9500.

Before attending this training, please supply the information about your project which is requested under Equipment Training on the JEOL 6300 web page, http://www.cnfusers.cornell.edu/cnf5_tool.taf?_function=detail&eq_id=171 .

This session covers tool specifications, radiation safety, pattern conversion software, ...more

EQUIPMENT LIST


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