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N+/P+ Polysilicon - C4

MRL Industries Furnace for deposition of polysilicon on silicon substrates

MRL Furnace
Manager: Phil Infante

Description:

The LPCVD Polysilicon Furnace is a low pressure CVD furnace with a 40” flat zone capable of processing up to 6” diameter wafers. Process gases available are SiH4, N2/PH3 and N2/B2H6 mixes for insitu doping, HCL for cleaning. Samples are restricted to silicon based materials only.

Capabilities:

  • Doped and undoped silicon films ranging from amorphous to poly
  • As-deposited doped film resistivities of 3-25 mohm-cm
  • Deposition temperatures from 450 to 670°C


Additional Resources:

C4 N+_P+ Poly Furn Instructions


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This material is based upon work supported by the National Science Foundation under Grant No. ECS-0335765. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.

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