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CNF Lab and Equipment Information
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TFT Polysilicon - A4
CAC Name: TFT NP Poly MRL Industries Furnace for polysilicon deposition on TFT compatible substrates 
Manager: Phil Infante
Equipment Training
Training for the furnace area covers the pre-furnace MOS clean, atmospheric and LPCVD processes. It is scheduled on a need basis, please email the tool manager for training requests. Include MOS area training in the subject header. You will be notified when the next scheduled training will be by email. Description:The TFT N+/P+ Polysilicon Furnace is an atmospheric furnace with a 42” flat zone capable of processing up to 6” diameter wafers. Process gases available are SiH4, N2/PH3 and N2/B2H6 mixes for insitu doping, HCL for cleaning, and NH3 for silane based nitride films. Samples are restricted to silicon and TFT compatible glass materials only. Capabilities:
Additional Resources:Equipment Information SheetBack to Top |
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FURNACE PROCESSING
Boron Doping - D1 Carbon Nanotube/Graphene Furnace CMOS N+ Polysilicon - D3 CMOS Wet Oxide - E2 General Material Anneal 1 - A1 LPCVD CMOS Nitride - E4 LPCVD LTO - B3 LPCVD Nitride - B4 MOS Clean MOS Clean Anneal 2 - B1 MOS Metal Anneal 3 - C1 MOS Metal Anneal 4 - C2 N+/P+ Polysilicon - C4 Phosphorus Doping - D2 TFT LPCVD LTO410 - A3 TFT Polysilicon - A4 TFT Wet/Dry Oxide - A2 Wet/Dry Oxide - B2 Back to Equipment List |
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This material is based upon work supported by the National Science Foundation under Grant No. ECS-0335765. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation. Cornell NanoScale Science & Technology Facility (CNF) 250 Duffield Hall, Cornell University, Ithaca, New York 14853-2700 Voice: 607-255-2329, Fax: 607-255-8601, Email: information@cnf.cornell.edu Powered by ITX |
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