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TFT Polysilicon - A4

MRL Industries Furnace for polysilicon deposition on TFT compatible substrates

MRL Furnace
Manager: Phil Infante

Description:

The TFT N+/P+ Polysilicon Furnace is an atmospheric furnace with a 42” flat zone capable of processing up to 6” diameter wafers. Process gases available are SiH4, N2/PH3 and N2/B2H6 mixes for insitu doping, HCL for cleaning, and NH3 for silane based nitride films. Samples are restricted to silicon and TFT compatible glass materials only.

Capabilities:

  • Doped and undoped silicon films ranging from amorphous to poly
  • As-deposited doped film resistivities of 3-25 mohm-cm
  • Deposition temperatures from 450 to 670°C
  • Silane base silicon nitride films at 700°C




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This material is based upon work supported by the National Science Foundation under Grant No. ECS-0335765. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.

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250 Duffield Hall, Cornell University, Ithaca, New York 14853-2700
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