CNF - Lab and Equipment Information

CNF Lab and Equipment Information

Schedule Training ¦

MOS Clean Anneal 2 - B1

CAC Name: Anneal 2

MRL Industries Furnace for annealing silicon compatible substrates

Manager: Phil Infante

Equipment Training
Training for the furnace area covers the pre-furnace MOS clean, atmospheric and LPCVD processes. It is scheduled on a need basis, please email the tool manager for training requests. Include MOS area training in the subject header. You will be notified when the next scheduled training will be by email.

Description:

The Anneal 2 Furnace is an atmospheric furnace with a 40” flat zone capable of processing up to 6” diameter wafers. The furnace tube is equipped with N2 and Ar gas for inert ambient processing, H2 for forming gas mixtures, and O2 for dry oxidation with or without HCL. Samples are restricted to silicon based materials only.

Capabilities:

N2 and Ar Anneals
H2/N2, H2/Ar Anneals up to 5% H2 max
Dry Oxidation
HCL during oxidations up to a 4% level
Low flow O2 processes
Pieces to 6” diameter wafers can be processed
Maximum temperature of 1100°C

Additional Resources:

Equipment Information Sheet

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This material is based upon work supported by the National Science Foundation under Grant No. ECS-0335765. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.

Cornell NanoScale Science & Technology Facility (CNF)
250 Duffield Hall, Cornell University, Ithaca, New York 14853-2700
Voice: 607-255-2329, Fax: 607-255-8601, Email: information@cnf.cornell.edu