Button: Contact CNFButton: MultimediaButton: About CNF
Button: Getting StartedButton: PublicationButton: REU ProgramButton: Events & SeminarsButton: Education OutreachButton: TechnologiesButton: Lab Equipment

Button: Lab User


Wet/Dry Oxide - B2

MRL Industries Furnace for oxidation of silicon substrates

Manager: Phil Infante

Description:

The Thermal Oxidation Furnace is an atmospheric furnace with a 40” flat zone capable of processing up to 6” diameter wafers. The furnace tube is equipped with an external torch for pyrogenic wet oxidation, high and low O2 flow controllers for dry oxidation and O2/inert mixtures, as well as N2 and Ar anneal ambient. Samples are restricted to silicon based materials only.

Capabilities:

  • Wet and dry oxidation
  • HCL during oxidation up to a 4% level
  • Low flow O2 processes
  • Anneals in N2 or Ar ambient
  • Pieces to 6” diameter wafers can be processed
  • Maximum temperature of 1200°C on select processes


Additional Resources:

Oxide Furnace Growth Curves
B2 Oxide Furnace Instructions


Back to Top




Button: Search Button: Search Keywords
Cornell University
NYSTARNNINNSF

This material is based upon work supported by the National Science Foundation under Grant No. ECS-0335765. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.

Cornell NanoScale Science & Technology Facility (CNF)
250 Duffield Hall, Cornell University, Ithaca, New York 14853-2700
Voice: 607-255-2329, Fax: 607-255-8601, Email: information@cnf.cornell.edu
Powered by ITX