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LPCVD LTO - B3

MRL Industries Furnace for low temperature oxide deposition on silicon based substrates

MRL Furnace
Manager: Phil Infante

Description:

The LPCVD Low Temperature Oxide furnace is a low pressure CVD furnace with a 40” flat zone capable of processing up to 6” diameter wafers. Process gases used are SiH4 and O2. Samples are restricted to silicon based materials only.

Capabilities:

  • Low Temperature deposited Oxide
  • 20 nm/min dep rate at 425°C




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This material is based upon work supported by the National Science Foundation under Grant No. ECS-0335765. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.

Cornell NanoScale Science & Technology Facility (CNF)
250 Duffield Hall, Cornell University, Ithaca, New York 14853-2700
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