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LPCVD Nitride - B4

MRL Industries Furnace for sililcon nitride deposition on silicon based substrates

MRL Furnaces
Manager: Phil Infante

Description:

The LPCVD Silicon Nitride furnace is a low pressure CVD furnace with a 40” flat zone capable of processing up to 6” diameter wafers. Process gases used are SiH2Cl2, NH3, and N2O. CVD silicon nitride films with controlled stress and high temperature oxide (HTO) can be deposited. Samples are restricted to silicon based materials only.

Capabilities:

  • Stoichiometric Silicon Nitride n=2.0
  • Low Stress silicon nitride, 200 MPa Tensile, n=2.2
  • 2-3 nm/min nitride dep rate
  • High Temperature Oxide at 800°C


Additional Resources:

12 20 06 LS Nitride Stress Data.xls
Nitride Deposition Rate Plots.xls
B4 Nitride Furnace Instructions.pdf


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This material is based upon work supported by the National Science Foundation under Grant No. ECS-0335765. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.

Cornell NanoScale Science & Technology Facility (CNF)
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