Suss SCIL Imprint
UV Imprint Lithography
Manager: Edward CamachoBackup: Daniel McCollister , John Treichler
Substrate Conformal Imprint Lithography for High Resolution Applications Over Large Areas.
- Up-To 6" full-field imprints, down to sub-50nm resolution
The overall SCIL process is a three step process. It begins with the fabrication of your master. The master is typically made at the CNF using either the ASML or one of the two JEOL ebeam writers. Typically, the size of the master has to be larger than the final working substrate that you are planing to transfer onto. Once the master is fabricated it is typically protected with an anti-stiction layer such as FOTS. At the CNF we us the MVD to apply this. Then we move onto the actual replication. We spin on a specialized formalized three part PDMS (h-PDMS) onto the surface of the master which is about 100um thick. The master is then transferred to the SCIL replication tool and held under vacuum. Then we pour about 600um thick layer of regular PDMS on top of the h-PDMS and sandwich a 200um thick flexible glass substrate. The replication tool then cures the stack for a few days until it is ready to be separated using the SUSS separation tool. Once separated, the excess PDMS is scraped away, cleaned and a square gasket is glue onto the perimeter of the 200mm square substrate. The replicated master is then let to dry. After the dry process, it is ready to be used on the SCIL. This replication process can take between two days to a week. To imprint, the MA6 is converted over to SCIL. And AMONIL adhesion promoter and AMONIL resist are spun on and baked onto the substrates. This process is only possible for full wafers. Suss has a full range of chucks for a range of substrates. Here at the CNF we only have 100mm, which dictates for your master to be at least 125mm. The exposure curing process takes several minutes and its also dependent on minimum feature size.
- Range of Imprint Technology 1nm to 1um
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This material is based upon work supported by the National Science Foundation under Grant No. NNCI-1542081. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.
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Cornell NanoScale Science & Technology Facility (CNF)
250 Duffield Hall, Cornell University, Ithaca, New York 14853-2700
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