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CNF Lab and Equipment Information
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TFT LPCVD LTO410 - A3
CAC Name: TFT LTO410 MRL Industries Furnace for low temperature oxide depositions on TFT compatible substrates 
Manager: Phil Infante
Equipment Training
Training for the furnace area covers the pre-furnace MOS clean, atmospheric and LPCVD processes. It is scheduled on a need basis, please email the tool manager for training requests. Include MOS area training in the subject header. You will be notified when the next scheduled training will be by email. Description:The TFT Low Temperature Oxide furnace is a low pressure CVD furnace with a 40” flat zone capable of processing up to 6” diameter wafers. Process gases used are SiH4 and O2 for silane base oxides and diethysilane (LTO410) for liquid source based oxide. Samples are restricted to silicon and TFT compatible glass materials only. Capabilities:
Additional Resources:Equipment Information SheetBack to Top |
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FURNACE PROCESSING
Boron Doping - D1 Carbon Nanotube/Graphene Furnace CMOS N+ Polysilicon - D3 CMOS Wet Oxide - E2 General Material Anneal 1 - A1 LPCVD CMOS Nitride - E4 LPCVD LTO - B3 LPCVD Nitride - B4 MOS Clean MOS Clean Anneal 2 - B1 MOS Metal Anneal 3 - C1 MOS Metal Anneal 4 - C2 N+/P+ Polysilicon - C4 Phosphorus Doping - D2 TFT LPCVD LTO410 - A3 TFT Polysilicon - A4 TFT Wet/Dry Oxide - A2 Wet/Dry Oxide - B2 Back to Equipment List |
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This material is based upon work supported by the National Science Foundation under Grant No. ECS-0335765. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation. Cornell NanoScale Science & Technology Facility (CNF) 250 Duffield Hall, Cornell University, Ithaca, New York 14853-2700 Voice: 607-255-2329, Fax: 607-255-8601, Email: information@cnf.cornell.edu Powered by ITX |
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