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TFT LPCVD LTO410 - A3

MRL Industries Furnace for low temperature oxide depositions on TFT compatible substrates

MRL Furnace
Manager: Phil Infante

Description:

The TFT Low Temperature Oxide furnace is a low pressure CVD furnace with a 40” flat zone capable of processing up to 6” diameter wafers. Process gases used are SiH4 and O2 for silane base oxides and diethysilane (LTO410) for liquid source based oxide. Samples are restricted to silicon and TFT compatible glass materials only.

Capabilities:

  • Low temperature deposited oxide
  • 20 nm/min dep rate at 425°C
  • LTO 410 deposited oxide at 400°C




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This material is based upon work supported by the National Science Foundation under Grant No. ECS-0335765. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.

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