Primaxx Vapor HF Etcher
CAC Name: Primaxx
Vapor HF Isotropic Release Etching
Manager: Vince GenovaBackup: Rob Ilic , Meredith Metzler
The Primaxx µEtch system is designed for low volume single wafer vapor HF etching. The system can accommodate a wafer with diameter up to 200mm.
The Primaxx HF/alcohol process employs a low pressure gas phase environment for isotropic etch removal of sacrificial silicon oxide layers to release flexures or other MEMS based devices. The process is carried out between 75-150 Torr and at temperatures between 40-60°C. Typical vertical and lateral etch rates are between 0.1-10µm/min. The process provides stiction free release with yields ->100%.
Fully characterized processes are available for selective etching of thermal oxide, and PECVD oxides (both silane and TEOS based) for a wide range of thicknesses. The vapor HF process is selective to metals such as Al and TiW. Other highly selective materials are Al2O3, a-Si, SiC, and LPCVD low stress nitride. Stoichiometric LPCVD silicon nitride is selective at low temperatures. PECVD nitride has a 1:1 selectivity to silicon oxide.
The key application is in the dry release of microstructures without the effect of stiction. By virtue of the reduced pressure operation, the gas phase etch process provides maximum feature penetration with its ability to remove 0.05µm thick sacrificial oxide layers under small structures. The process is exceptionally suited for complex 3D elements.
Additional Resources:Equipment Information Sheet
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New AJA Ion Mill arriving - Veeco Ion Mill Going Away
Jan 15, 2014
CNF purchased a new fully automated, AJA ion mill with a 22cm Kaufman source. We will receive the system at the end of January/beginning of February time frame. Upon arrival we will install the system. This requires the removal of the existing Veeco ion mill. Consequently we will have a downtime of about a month or two without ion milling capabilities.
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This material is based upon work supported by the National Science Foundation under Grant No. ECCS-0335765. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.
Cornell NanoScale Science & Technology Facility (CNF)
250 Duffield Hall, Cornell University, Ithaca, New York 14853-2700
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