CNF - Lab and Equipment Information

Equipment Training
This training covers operation of the JEOL 6300 and the JEOL 9300.
Please sign up for training when you expect to have substrates to expose within 10 days of the training. If there is a long delay between training and exposing, you will have forgotten most of the training and it will be difficult to pick it up again.
To help us prepare for training, please copy the following text into an email message, fill in the information, and send it to bleier(at)cnf.cornell.edu , with copies to westly(at)cnf.cornell.edu , treichler(at)cnf.cornell.edu and rob(at)cnf.cornell.edu.

Your name, NetID or Guest ID, cell phone number if that's OK with you
Your Principal Investigator's name
Your Institution (university, company, etc.)
Brief description of project, including whether exposing whole wafers or small pieces and whether exposures are aligned.
A couple references to papers similar to your project.
Whether you have samples ready to expose now.
Minimum feature size required.

Please use the online training scheduler below to sign up for e beam lithography training. The scheduler only lists the JEOL 6300 but the training covers both the JEOL 6300 and the JEOL 9300.

Training Schedule
   06/11    2:15 pm - 4:30 pm    4 seat(s) remaining.
   06/18    2:15 pm - 4:30 pm    4 seat(s) remaining.
   06/25    2:15 pm - 4:30 pm    4 seat(s) remaining.

Description:

The unique capability of the JEOL 6300 is that a fifth lens can be used to get a smaller beam spot size and write sub-10 nm features. This is the high resolution writing mode. Writing without the 5th lens in 4th lens mode is called the high speed writing mode.

The stage can load a wafer substrate up to 200mm or a mask blank up to 6 inches.

When should I use the JEOL 9300 or the JEOL 6300?

The answer is it depends on what you are making. The 9300 has better overlay accuracy than the 6300 high speed mode (lens 4), and better stitching accuracy for large patterns. The 9300 has higher clock speed and larger field size than the 6300, so large patterns will be written faster at the same beam current. The 6300 also has a slower primary deflector than the 9300. The 6300 has better resolution in high resolution mode (lens 5) , but the field size is much smaller.

So in general, use the 9300 for large patterns and for excellent stitching accuracy. Use the 6300 for smaller patterns with the smallest feature sizes, as small as sub-10 nm. To make the best decision, compare your resolution, overlay and stitching requirements to the machine specifications listed on the tool web pages, and consult with the e beam staff.

See the Computing page for Layout BEAMER instructions.

Capabilities:

Overlay Accuracy in High resolution writing mode: less than or equal to +/- 20 nm; in High speed writing mode: less than or equal to +/- 35 nm

Field Stitching Accuracy in High resolution writing mode: less than or equal to +/- 20 nm; in High speed writing mode: less than or equal to +/- 30 nm

Beam current: 30 pA to 20 nA; Minimum beam size: less than or equal to 2.9 nm at 30 pA, in high resolution writing mode at 100 kV

Beam positioning unit (pixel size) in High resolution writing mode 100 kV: 0.125 nm; in High speed writing mode 100kV: 1 nm

Beam scanning step size in High resolution writing mode 100kV: 0.125 nm × N, N = 1,2,4,6,8,…,254 (1 and even number)

Beam scanning step size in High speed writing mode 100kV: 1 nm × N, N = 1,2,4,6,8,…,254 (1 and even number)

Beam scanning clock rate: 50 MHz

Writing area: 150 mm × 150 mm

Auto loader: Automatic 10 cassette loading system

Writing field size in High resolution writing mode 100kV: Up to 62.5 um × 62.5 um; in High speed writing mode 100kV: Up to 500 um × 500 um

Description:

Capabilities:

Additional Resources: