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CMOS N+ Polysilicon - D3

CMOS N+ Polyslicon Furnace

Manager: Phil Infante

Description:

The CMOS N+ LPCVD Polysilicon Furnace is a low pressure CVD furnace with a 40” flat zone capable of processing up to 6” diameter wafers. Process gases available are SiH4, He/PH3 mix for in-situ doping, and HCL for cleaning. Samples are restricted to silicon based materials only and CMOS restricted tools and films.

Capabilities:

    Processes Available:

    Applications:




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    This material is based upon work supported by the National Science Foundation under Grant No. ECS-0335765. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.

    Cornell NanoScale Science & Technology Facility (CNF)
    250 Duffield Hall, Cornell University, Ithaca, New York 14853-2700
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