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Phosphorus Doping - D2

Solid source phosphorus diffusion tube

Manager: Phil Infante

Description:

The Phosphorus Doping Furnace is an atmospheric furnace with a 40” flat zone capable of processing up to 6” diameter wafers. The furnace tube is configured for utilizing solid source wafers for silicon doping. The furnace is restricted to silicon materials.

Processes Available:

Solid Source diffusion on phosphorus into silicon wafers or polysilicon films.

Applications:




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This material is based upon work supported by the National Science Foundation under Grant No. ECS-0335765. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.

Cornell NanoScale Science & Technology Facility (CNF)
250 Duffield Hall, Cornell University, Ithaca, New York 14853-2700
Voice: 607-255-2329, Fax: 607-255-8601, Email: information@cnf.cornell.edu
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