PlasmaTherm Deep Si Etcher
DRIE silicon etch
Manager: Tom PennellBackup: Vince Genova , Christopher Alpha
The PlasmaTherm Versaline system is a state of the art tool for DRIE of silicon. It provides the etch precision and process latitude necessary to create next generation nanoscale and MEMS devices. This platform enables sub-second etch and deposition steps producing much smoother sidewalls as scalloping is reduced to a minimum.
The tool is equipped for both 4 and 6-inch wafers, as well as pieces which can be mounted on a handle wafer. It also has a highly sensitive optical emission spectroscopy system (OES) to enable SOI endpoint detection which eliminates notching.
Etching can be done with photoresists, ebeam resists, silicon oxide, and ALD Al2O3 masks. Selectivity to PR is 110:1, oxide selectivity as high as 340:1 and Al2O3 has selectivity > 1000:1. Trench aspect ratios of up to 50:1 and isolated line aspect ratios of 200:1 are achievable.
DRIE is vital to the fabrication of many MEMS devices including microfluidics, RF MEMS, biological MEMS, as well as integrated CMOS structures.
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This material is based upon work supported by the National Science Foundation under Grant No. NNCI-1542081. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.
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