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ETCHING
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PlasmaTherm Deep Si Etcher
DRIE silicon etch
Manager: Meredith Metzler
Backup: Vince Genova
Equipment Training
Please contact Meredith Metzler via email for training. Description:The PlasmaTherm Versaline system is a state of the art tool for DRIE of silicon. It provides the etch precision and process latitude necessary to create next generation nanoscale and MEMS devices. This platform enables sub-second etch and deposition steps producing much smoother sidewalls as scalloping is reduced to a minimum. Capabilities:The tool is equipped for both 4 and 6-inch wafers, as well as pieces which can be mounted on a handle wafer. It also has a highly sensitive optical emission spectroscopy system (OES) to enable SOI endpoint detection which eliminates notching. Processes Available:Etching can be done with photoresists, ebeam resists, silicon oxide, and ALD Al2O3 masks. Selectivity to PR is 110:1, oxide selectivity as high as 340:1 and Al2O3 has selectivity > 1000:1. Trench aspect ratios of up to 50:1 and isolated line aspect ratios of 200:1 are achievable. Applications:DRIE is vital to the fabrication of many MEMS devices including microfluidics, RF MEMS, biological MEMS, as well as integrated CMOS structures. Additional Resources:Equipment Information SheetBack to Top |
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PlasmaTherm service visits
May 03, 2013 PlasmaTherm will have a service engineer on site to perform service on the etch tools. Here is the schedule when the tools will be unavailable: Week of May 6: PlasmaTherm VLN DRIE - ongoing issue Week of May 13: PT770 Week of May 20: PT770 & PT720/740 Scheduled updated 4/30 due to delays. Please plan accordingly. ![]()
ETCHING
Acid Etching Tanks Aura 1000 Resist Strip Branson Resist Strip Glen 1000 Resist Strip Hamatech Hot Piranha Hamatech Hot SC1/SC2 Oxford 100 Etcher Oxford 81 Etcher Oxford 82 Etcher PlasmaTherm Deep Si Etcher Primaxx Vapor HF Etcher PT72 Etcher PT720-740 Etcher PT770 Etcher Trion Etcher Unaxis 770 Deep Si Etcher Veeco Ion Mill Xactix Xenon Difluoride Etcher YES Asher Back to Equipment List |
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This material is based upon work supported by the National Science Foundation under Grant No. ECS-0335765. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation. Cornell NanoScale Science & Technology Facility (CNF) 250 Duffield Hall, Cornell University, Ithaca, New York 14853-2700 Voice: 607-255-2329, Fax: 607-255-8601, Email: information@cnf.cornell.edu Powered by ITX |
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