CNF - Lab and Equipment Information

ETCHING

Schedule Training ¦

YES Asher

CAC Name: yesasher

YES CV200RFS Oxygen Plasma Asher

Manager: Jerry Drumheller

Backup: Michael Skvarla

Equipment Training
Training takes about a half hour and is set up as needed through e-mail. Please contact Jerry Drumheller (drumheller@cnf.cornell.edu) to set up a mutually convenient time.

Description:

Vacuum system with Oxygen Plasma, designed for Resist Stripping and Descum. It uses a 9" diameter Hot Plate stage to control wafer temperature. The system is used to strip resist off single wafers, up to 8" diameter. The 40 KHz plasma is isolated from the wafer by a grounded, perforated metal plate.

Capabilities:

Wafer is temperature controlled from 30 - 250°C.
40 KHz power is variable, up to 1250 Watts
Strip rates greater than 1 micron per minute for soft baked resist
Typical process times are 30 sec. to 5 min..
Process times greater than an hour can be done.

Processes Available:

Oxygen is used for removing organics. Nitrogen and Argon are also available for gentle cleaning and oxide removal. Typical operating pressure is 300-350 mTorr.
Low power and low temperature give good versatility for descum processes.

Applications:

Resist Stripping, Patterned Resist Descum, Wafer Cleaning.

Additional Resources:

Equipment Information Sheet

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This material is based upon work supported by the National Science Foundation under Grant No. ECCS-1542081. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.

Cornell NanoScale Science & Technology Facility (CNF)
250 Duffield Hall, Cornell University, Ithaca, New York 14853-2700
Voice: 607-255-2329, Fax: 607-255-8601, Email: information@cnf.cornell.edu