YES CV200RFS Oxygen Plasma Asher
Manager: Jerry DrumhellerBackup: Michael Skvarla
Vacuum system with Oxygen Plasma, designed for Resist Stripping and Descum. It uses a 9" diameter Hot Plate stage to control wafer temperature. The system is used to strip resist off single wafers, up to 8" diameter. The 40 KHz plasma is isolated from the wafer by a grounded, perforated metal plate.
Oxygen is used for removing organics. Nitrogen and Argon are also available for gentle cleaning and oxide removal. Typical operating pressure is 300-350 mTorr.
Resist Stripping, Patterned Resist Descum, Wafer Cleaning.
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This material is based upon work supported by the National Science Foundation under Grant No. ECCS-1542081. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.
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Cornell NanoScale Science & Technology Facility (CNF)
250 Duffield Hall, Cornell University, Ithaca, New York 14853-2700
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