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Oxford ALD FlexAL

Atomic Layer Deposition

Oxford FlexAL ALD
Manager: Vince Genova
Backup: Phil Infante , Jeremy Clark

Description:

Atomic Layer Deposition (ALD) offers the opportunity to create precisely controlled structures for advanced semiconductor and other nanotechnology applications, by creating ultra-thin films on nanometre and sub-nanometre scales. A unique property of ALD is its ability to deposit material conformally into high aspect ratio features. The technology is widely regarded as a key enabler of the next generation of smaller semiconductor devices.

Capabilities:

Available thin film materials:
Al2O3-plasma and thermal
AlN-plasma
HfO2-plasma and thermal
HfN-plasma
TaN-plasma and thermal
Ta2O5-plasma and thermal
SiO2-plasma
Si3N4-plasma
HfAlOx-plasma
HfSiOx-plasma
HfSiOxNy-plasma

Processes Available:



Applications:

These highly uniform thin films (<50nm) can be used as high-k dielectrics and metal gates for advanced transistor fabrication, along with applications to MEMS/NEMS and photonics applications.




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