Xactix Xenon Difluoride Etcher
Xactix XeF2 Isotropic silicon etch system
Manager: Vince GenovaBackup: Meredith Metzler
This is a XeF2 based vapor phase etch system for isotropic and selective silicon etching.
XeF2 isotropic silicon etching is particularly well suited for MEMS applications. The XeF2 reaction with silicon is purely chemical and spontaneous (ie, plasmaless). XeF2 vapor phase etching exhibits nearly infinite selectivity of silicon to photoresist, SiO2, Si3N4, and aluminum. Being a vapor phase etchant, XeF2 avoids many common problems during release such as stiction,etc.
Custom process recipes can be created by the user depending on their individual device/process needs using the following modes.
The primary application is for release of metal and dielectric structures by selective isotropic etching of silicon (ie, single crystal silicon, polysilicon, and amorphous silicon). This process can also be used to complement DRIE etching of silicon.
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This material is based upon work supported by the National Science Foundation under Grant No. ECS-0335765. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.
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