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FURNACE PROCESSING
Boron Doping - D1 
Solid Source Boron Diffusion
Carbon Nanotube/Graphene Furnace 
First Nano Carbon Nanotube and Graphene Furnace
CMOS N+ Polysilicon - D3 
CMOS N+ Polyslicon Furnace
CMOS Wet Oxide - E2 
CMOS Wet Oxidation Furnace
General Material Anneal 1 - A1 
MRL Industries Furnace for nitrogen anneals or oxidation of nonelectronic substrates
LPCVD LTO - B3 
MRL Industries Furnace for low temperature oxide deposition on silicon based substrates
LPCVD Nitride - B4 
MRL Industries Furnace for sililcon nitride deposition on silicon based substrates
MOS Clean 
Wet Deck for SC-1, SC-2 cleaning of wafers
MOS Clean Anneal 2 - B1 
MRL Industries Furnace for annealing silicon compatible substrates
MOS Metal Anneal 3 - C1 
MRL Industries Furnace for annealing of silicon based materials with approved metals
MOS Metal Anneal 4 - C2 
MRL Industries Furnace for annealing silicon wafers with a limited set of metals
N+/P+ Polysilicon - C4 
MRL Industries Furnace for deposition of polysilicon on silicon substrates
Phosphorus Doping - D2 
Solid source phosphorus diffusion tube
TFT LPCVD LTO410 - A3 
MRL Industries Furnace for low temperature oxide depositions on TFT compatible substrates
TFT Polysilicon - A4 
MRL Industries Furnace for polysilicon deposition on TFT compatible substrates
TFT Wet/Dry Oxide - A2 
MRL Industries Furnace for thermal oxidation of TFT compatible substrates
Wet/Dry Oxide - B2 
MRL Industries Furnace for oxidation of silicon substrates


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This material is based upon work supported by the National Science Foundation under Grant No. ECS-0335765. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.

Cornell NanoScale Science & Technology Facility (CNF)
250 Duffield Hall, Cornell University, Ithaca, New York 14853-2700
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